Lasing characteristics of intermixed highly-stacked quantum dot structure by ion implantation for wavelength-manipulated light sources

Shin'e Matsui, Yota Akashi, Shohei Isawa, Atsushi Matsumoto, Koichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We have developed the quantum dot intermixing (QDI) technique using ion implantation and rapid thermal annealing (RTA) on highly-stacked quantum dot (QD) structure for wavelength-manipulated light sources. We report lasing characteristics of QDI structure (QDI-LD) whose oscillation wavelengths were ranged from 1550nm to 1350 nm.

    Original languageEnglish
    Title of host publication22nd Microoptics Conference, MOC 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages92-93
    Number of pages2
    Volume2018-January
    ISBN (Electronic)9784863486096
    DOIs
    Publication statusPublished - 2018 Jan 2
    Event22nd Microoptics Conference, MOC 2017 - Tokyo, Japan
    Duration: 2017 Nov 192017 Nov 22

    Other

    Other22nd Microoptics Conference, MOC 2017
    CountryJapan
    CityTokyo
    Period17/11/1917/11/22

    Fingerprint

    Ion implantation
    Semiconductor quantum dots
    Light sources
    lasing
    ion implantation
    light sources
    quantum dots
    Wavelength
    wavelengths
    Rapid thermal annealing
    oscillations
    annealing

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Matsui, S., Akashi, Y., Isawa, S., Matsumoto, A., Akahane, K., Matsushima, Y., ... Utaka, K. (2018). Lasing characteristics of intermixed highly-stacked quantum dot structure by ion implantation for wavelength-manipulated light sources. In 22nd Microoptics Conference, MOC 2017 (Vol. 2018-January, pp. 92-93). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/MOC.2017.8244507

    Lasing characteristics of intermixed highly-stacked quantum dot structure by ion implantation for wavelength-manipulated light sources. / Matsui, Shin'e; Akashi, Yota; Isawa, Shohei; Matsumoto, Atsushi; Akahane, Koichi; Matsushima, Yuichi; Ishikawa, Hiroshi; Utaka, Katsuyuki.

    22nd Microoptics Conference, MOC 2017. Vol. 2018-January Institute of Electrical and Electronics Engineers Inc., 2018. p. 92-93.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Matsui, S, Akashi, Y, Isawa, S, Matsumoto, A, Akahane, K, Matsushima, Y, Ishikawa, H & Utaka, K 2018, Lasing characteristics of intermixed highly-stacked quantum dot structure by ion implantation for wavelength-manipulated light sources. in 22nd Microoptics Conference, MOC 2017. vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 92-93, 22nd Microoptics Conference, MOC 2017, Tokyo, Japan, 17/11/19. https://doi.org/10.23919/MOC.2017.8244507
    Matsui S, Akashi Y, Isawa S, Matsumoto A, Akahane K, Matsushima Y et al. Lasing characteristics of intermixed highly-stacked quantum dot structure by ion implantation for wavelength-manipulated light sources. In 22nd Microoptics Conference, MOC 2017. Vol. 2018-January. Institute of Electrical and Electronics Engineers Inc. 2018. p. 92-93 https://doi.org/10.23919/MOC.2017.8244507
    Matsui, Shin'e ; Akashi, Yota ; Isawa, Shohei ; Matsumoto, Atsushi ; Akahane, Koichi ; Matsushima, Yuichi ; Ishikawa, Hiroshi ; Utaka, Katsuyuki. / Lasing characteristics of intermixed highly-stacked quantum dot structure by ion implantation for wavelength-manipulated light sources. 22nd Microoptics Conference, MOC 2017. Vol. 2018-January Institute of Electrical and Electronics Engineers Inc., 2018. pp. 92-93
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    AU - Akahane, Koichi

    AU - Matsushima, Yuichi

    AU - Ishikawa, Hiroshi

    AU - Utaka, Katsuyuki

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