Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate

T. Tanaka; S. Minagawa; T. Kawano; T. Kajimura

doi:10.1049/el:19890607

Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate

T. Tanaka, S. Minagawa, T. Kawano, T. Kajimura

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is also discussed.

Original language	English
Pages (from-to)	905-907
Number of pages	3
Journal	Electronics Letters
Volume	25
Issue number	14
DOIs	https://doi.org/10.1049/el:19890607
Publication status	Published - 1989 Jul 6
Externally published	Yes

Keywords

GaAs
Semiconductor devices and materials
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19890607

Cite this

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title = "Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate",

abstract = "The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is also discussed.",

keywords = "GaAs, Semiconductor devices and materials, Semiconductor lasers",

author = "T. Tanaka and S. Minagawa and T. Kawano and T. Kajimura",

year = "1989",

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T1 - Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate

AU - Tanaka, T.

AU - Minagawa, S.

AU - Kawano, T.

AU - Kajimura, T.

PY - 1989/7/6

Y1 - 1989/7/6

N2 - The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is also discussed.

AB - The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is also discussed.

KW - GaAs

KW - Semiconductor devices and materials

KW - Semiconductor lasers

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DO - 10.1049/el:19890607

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JF - Electronics Letters

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ER -

Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate

Abstract

Keywords

ASJC Scopus subject areas

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