Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from (100) plane of GaAs substrate

T. Tanaka, S. Minagawa, Toshihiro Kawano, T. Kajimura

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The lasing wavelengths of AlGaInP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is discussed.

Original languageEnglish
Pages (from-to)905-907
Number of pages3
JournalElectronics Letters
Issue number14
Publication statusPublished - 1989 Jul 6
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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