Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from (100) plane of GaAs substrate

T. Tanaka, S. Minagawa, Toshihiro Kawano, T. Kajimura

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The lasing wavelengths of AlGaInP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is discussed.

Original languageEnglish
Pages (from-to)905-907
Number of pages3
JournalElectronics Letters
Volume25
Issue number14
Publication statusPublished - 1989 Jul 6
Externally publishedYes

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Semiconductor lasers
Wavelength
Substrates
Laser modes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from (100) plane of GaAs substrate. / Tanaka, T.; Minagawa, S.; Kawano, Toshihiro; Kajimura, T.

In: Electronics Letters, Vol. 25, No. 14, 06.07.1989, p. 905-907.

Research output: Contribution to journalArticle

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