The lasing wavelengths of AlGaInP semiconductor lasers are investigated as functions of the off-angle in the direction of  from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is discussed.
|Number of pages||3|
|Publication status||Published - 1989 Jul 6|
ASJC Scopus subject areas
- Electrical and Electronic Engineering