Lateral P-channel IGBT on SOI with Double Top RESURF Layers for Emitter Follower Type Complementary IGBT

ZIjian Zhang, Okita Kazuki, Ting Kong, Zijian Feng, Suyang Liu, Masahide Inuishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study introduces a new simple double layers RESURF structure for lateral IGBT on SOI which can achieve good SOA and satisfy good switching characteristics in half bridge inverter consisting of an emitter follower type complementary lateral IGBT(EF-CLIGBT) on SOI without complicated dead time setting to avoid the penetration current. The study especially focuses on the improvement of SOA for a p-channel LIGBT due to the difficulty in securing sufficient SOA in comparison with an n-channel LIGBT. The proposed structure can achieve sufficient forward blocking voltage as well as switching characteristics by avoiding the channel pinch-off caused by the junction between the N top RESURF and the P-drift layer. As a result, it is verified that the EF-CLIGBT leg can operate the half bridge inverter successfully without the through current.

Original languageEnglish
Title of host publication2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages153-156
Number of pages4
ISBN (Electronic)9781665422017
DOIs
Publication statusPublished - 2022
Event34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada
Duration: 2022 May 222022 May 25

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2022-May
ISSN (Print)1063-6854

Conference

Conference34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Country/TerritoryCanada
CityVancouver
Period22/5/2222/5/25

Keywords

  • double layers
  • Emitter follower complementary LIGBT
  • half bridge inverter
  • SOA of P LIGBT on SOI

ASJC Scopus subject areas

  • Engineering(all)

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