Abstract
The lattice relaxation of GaAs islands grown on Si(100) substrates are studied by combining reflection high-energy electron diffraction and molecular beam epitaxy. At the beginning of the growth, rapid increase of substrate surface and large Poisson's ratios are observed. This increase can be attributed to the surface effects of islands.
| Original language | English |
|---|---|
| Pages (from-to) | 701-703 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 71 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1997 Aug 4 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)