Lattice relaxation of GaAs islands grown on Si(100) substrate

Koyu Asai, Kazuhito Kamei, Hisashi Katahama

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The lattice relaxation of GaAs islands grown on Si(100) substrates are studied by combining reflection high-energy electron diffraction and molecular beam epitaxy. At the beginning of the growth, rapid increase of substrate surface and large Poisson's ratios are observed. This increase can be attributed to the surface effects of islands.

Original languageEnglish
Pages (from-to)701-703
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number5
DOIs
Publication statusPublished - 1997 Aug 4
Externally publishedYes

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Poisson ratio
high energy electrons
molecular beam epitaxy
electron diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lattice relaxation of GaAs islands grown on Si(100) substrate. / Asai, Koyu; Kamei, Kazuhito; Katahama, Hisashi.

In: Applied Physics Letters, Vol. 71, No. 5, 04.08.1997, p. 701-703.

Research output: Contribution to journalArticle

Asai, Koyu ; Kamei, Kazuhito ; Katahama, Hisashi. / Lattice relaxation of GaAs islands grown on Si(100) substrate. In: Applied Physics Letters. 1997 ; Vol. 71, No. 5. pp. 701-703.
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