Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

    Original languageEnglish
    Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Print)9781479956777
    DOIs
    Publication statusPublished - 2015 Dec 4
    EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
    Duration: 2014 Jun 82014 Jun 9

    Other

    OtherSilicon Nanoelectronics Workshop, SNW 2014
    CountryUnited States
    CityHonolulu
    Period14/6/814/6/9

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • Cite this

    Kobayashi, Y., Kumakura, K., Akasaka, T., Yamamoto, H., & Makimoto, T. (2015). Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348536] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348536