Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

    Original languageEnglish
    Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Print)9781479956777
    DOIs
    Publication statusPublished - 2015 Dec 4
    EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
    Duration: 2014 Jun 82014 Jun 9

    Other

    OtherSilicon Nanoelectronics Workshop, SNW 2014
    CountryUnited States
    CityHonolulu
    Period14/6/814/6/9

    Fingerprint

    Gallium nitride
    Boron nitride
    Aluminum Oxide
    Substrates
    Sapphire
    Semiconductor quantum wells
    Light emitting diodes
    Heterojunctions
    gallium nitride
    boron nitride

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Kobayashi, Y., Kumakura, K., Akasaka, T., Yamamoto, H., & Makimoto, T. (2015). Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348536] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348536

    Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. / Kobayashi, Yasuyuki; Kumakura, Kazuhide; Akasaka, Tetsuya; Yamamoto, Hideki; Makimoto, Toshiki.

    2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348536.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kobayashi, Y, Kumakura, K, Akasaka, T, Yamamoto, H & Makimoto, T 2015, Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348536, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 14/6/8. https://doi.org/10.1109/SNW.2014.7348536
    Kobayashi Y, Kumakura K, Akasaka T, Yamamoto H, Makimoto T. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. In 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc. 2015. 7348536 https://doi.org/10.1109/SNW.2014.7348536
    Kobayashi, Yasuyuki ; Kumakura, Kazuhide ; Akasaka, Tetsuya ; Yamamoto, Hideki ; Makimoto, Toshiki. / Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015.
    @inproceedings{e11d2ff16df3406d860030c5860aaf1b,
    title = "Layered boron nitride as a release layer for mechanical transfer of GaN-based devices",
    abstract = "We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.",
    author = "Yasuyuki Kobayashi and Kazuhide Kumakura and Tetsuya Akasaka and Hideki Yamamoto and Toshiki Makimoto",
    year = "2015",
    month = "12",
    day = "4",
    doi = "10.1109/SNW.2014.7348536",
    language = "English",
    isbn = "9781479956777",
    booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",

    }

    TY - GEN

    T1 - Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

    AU - Kobayashi, Yasuyuki

    AU - Kumakura, Kazuhide

    AU - Akasaka, Tetsuya

    AU - Yamamoto, Hideki

    AU - Makimoto, Toshiki

    PY - 2015/12/4

    Y1 - 2015/12/4

    N2 - We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

    AB - We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

    UR - http://www.scopus.com/inward/record.url?scp=84963877985&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84963877985&partnerID=8YFLogxK

    U2 - 10.1109/SNW.2014.7348536

    DO - 10.1109/SNW.2014.7348536

    M3 - Conference contribution

    SN - 9781479956777

    BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014

    PB - Institute of Electrical and Electronics Engineers Inc.

    ER -