Leakage mechanism of local junctions forming the main or tail mode of retention characteristics for dynamic random access memories

Shuichi Ueno, Yasuo Inoue, Masahide Inuishi, Natsuro Tsubouchi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have reported the test structure for measuring the leakage characteristics of the local junctions. In this paper, we analyze the measurement results of the leakage characteristics of local pn junctions. We determined that the trap-assisted tunneling mechanism controls the leakage current of the main mode cells. It is observed that the increment of the leakage current at the leaky junctions in the tail mode is smaller than that at the normal junctions in the main mode when the supply voltage is increased. We propose a two-traps related leakage mechanism for the leakage current of the pn junctions in the tail mode. The two-traps pair increases the leakage current and forms the tail mode in the distribution of retention time of the dynamic random access memories.

Original languageEnglish
Pages (from-to)1963-1968
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 B
Publication statusPublished - 2000
Externally publishedYes

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random access memory
Leakage currents
leakage
Data storage equipment
traps
Electric potential
electric potential
cells

Keywords

  • DRAM retention cycle
  • Leakage current
  • pn junction
  • Trap-assisted tunneling
  • Two-traps related trap-assisted tunneling

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We have reported the test structure for measuring the leakage characteristics of the local junctions. In this paper, we analyze the measurement results of the leakage characteristics of local pn junctions. We determined that the trap-assisted tunneling mechanism controls the leakage current of the main mode cells. It is observed that the increment of the leakage current at the leaky junctions in the tail mode is smaller than that at the normal junctions in the main mode when the supply voltage is increased. We propose a two-traps related leakage mechanism for the leakage current of the pn junctions in the tail mode. The two-traps pair increases the leakage current and forms the tail mode in the distribution of retention time of the dynamic random access memories.",
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T1 - Leakage mechanism of local junctions forming the main or tail mode of retention characteristics for dynamic random access memories

AU - Ueno, Shuichi

AU - Inoue, Yasuo

AU - Inuishi, Masahide

AU - Tsubouchi, Natsuro

PY - 2000

Y1 - 2000

N2 - We have reported the test structure for measuring the leakage characteristics of the local junctions. In this paper, we analyze the measurement results of the leakage characteristics of local pn junctions. We determined that the trap-assisted tunneling mechanism controls the leakage current of the main mode cells. It is observed that the increment of the leakage current at the leaky junctions in the tail mode is smaller than that at the normal junctions in the main mode when the supply voltage is increased. We propose a two-traps related leakage mechanism for the leakage current of the pn junctions in the tail mode. The two-traps pair increases the leakage current and forms the tail mode in the distribution of retention time of the dynamic random access memories.

AB - We have reported the test structure for measuring the leakage characteristics of the local junctions. In this paper, we analyze the measurement results of the leakage characteristics of local pn junctions. We determined that the trap-assisted tunneling mechanism controls the leakage current of the main mode cells. It is observed that the increment of the leakage current at the leaky junctions in the tail mode is smaller than that at the normal junctions in the main mode when the supply voltage is increased. We propose a two-traps related leakage mechanism for the leakage current of the pn junctions in the tail mode. The two-traps pair increases the leakage current and forms the tail mode in the distribution of retention time of the dynamic random access memories.

KW - DRAM retention cycle

KW - Leakage current

KW - pn junction

KW - Trap-assisted tunneling

KW - Two-traps related trap-assisted tunneling

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