The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.
|Title of host publication||IEEE International SOI Conference|
|Place of Publication||Piscataway, NJ, United States|
|Number of pages||2|
|Publication status||Published - 2000|
ASJC Scopus subject areas
- Electrical and Electronic Engineering