Linearity and low-noise performance of SOI MOSFETs for RF applications

A. O. Adan, S. Shitara, N. Tanba, M. Fukumi, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

Original languageEnglish
Title of host publicationIEEE International SOI Conference
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages30-31
Number of pages2
Publication statusPublished - 2000
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Adan, A. O., Shitara, S., Tanba, N., Fukumi, M., & Yoshimasu, T. (2000). Linearity and low-noise performance of SOI MOSFETs for RF applications. In IEEE International SOI Conference (pp. 30-31). IEEE.