Linearity and low-noise performance of SOI MOSFETs for RF applications

A. O. Adan, S. Shitara, N. Tanba, M. Fukumi, T. Yoshimasu

Research output: Contribution to conferencePaper

6 Citations (Scopus)

Abstract

The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

Original languageEnglish
Pages30-31
Number of pages2
Publication statusPublished - 2000 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Adan, A. O., Shitara, S., Tanba, N., Fukumi, M., & Yoshimasu, T. (2000). Linearity and low-noise performance of SOI MOSFETs for RF applications. 30-31.