Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers

Muhan Choi, Tomoko Tanaka, Satoshi Sunada, Takahisa Harayama

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers with various length of passive waveguide. It is experimentally confirmed that the linewidth of the lasers is proportional to the square of the ratio of the length of active part of the cavity over the total length of the cavity. The lasers are applicable for communication and sensing devices, which need the narrow linewidth.

Original languageEnglish
Article number231110
JournalApplied Physics Letters
Volume94
Issue number23
DOIs
Publication statusPublished - 2009
Externally publishedYes

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ring lasers
semiconductor lasers
cavities
lasers
communication
waveguides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers. / Choi, Muhan; Tanaka, Tomoko; Sunada, Satoshi; Harayama, Takahisa.

In: Applied Physics Letters, Vol. 94, No. 23, 231110, 2009.

Research output: Contribution to journalArticle

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