Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers

Muhan Choi; Tomoko Tanaka; Satoshi Sunada; Takahisa Harayama

doi:10.1063/1.3148673

Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers

Muhan Choi^*, Tomoko Tanaka, Satoshi Sunada, Takahisa Harayama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers with various length of passive waveguide. It is experimentally confirmed that the linewidth of the lasers is proportional to the square of the ratio of the length of active part of the cavity over the total length of the cavity. The lasers are applicable for communication and sensing devices, which need the narrow linewidth.

Original language	English
Article number	231110
Journal	Applied Physics Letters
Volume	94
Issue number	23
DOIs	https://doi.org/10.1063/1.3148673
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3148673

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title = "Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers",

abstract = "We report linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers with various length of passive waveguide. It is experimentally confirmed that the linewidth of the lasers is proportional to the square of the ratio of the length of active part of the cavity over the total length of the cavity. The lasers are applicable for communication and sensing devices, which need the narrow linewidth.",

author = "Muhan Choi and Tomoko Tanaka and Satoshi Sunada and Takahisa Harayama",

note = "Funding Information: The authors greatly thank Professor Takehiro Fukushima, Keizo Inagaki, and Inbo Kim for the fruitful discussions. The work at ATR was supported in part by the National Institute of Information and Communication Technology of Japan.",

year = "2009",

doi = "10.1063/1.3148673",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

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TY - JOUR

T1 - Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers

AU - Choi, Muhan

AU - Tanaka, Tomoko

AU - Sunada, Satoshi

AU - Harayama, Takahisa

N1 - Funding Information: The authors greatly thank Professor Takehiro Fukushima, Keizo Inagaki, and Inbo Kim for the fruitful discussions. The work at ATR was supported in part by the National Institute of Information and Communication Technology of Japan.

PY - 2009

Y1 - 2009

N2 - We report linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers with various length of passive waveguide. It is experimentally confirmed that the linewidth of the lasers is proportional to the square of the ratio of the length of active part of the cavity over the total length of the cavity. The lasers are applicable for communication and sensing devices, which need the narrow linewidth.

AB - We report linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers with various length of passive waveguide. It is experimentally confirmed that the linewidth of the lasers is proportional to the square of the ratio of the length of active part of the cavity over the total length of the cavity. The lasers are applicable for communication and sensing devices, which need the narrow linewidth.

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U2 - 10.1063/1.3148673

DO - 10.1063/1.3148673

M3 - Article

AN - SCOPUS:67649086094

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VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231110

ER -

Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers

Abstract

ASJC Scopus subject areas

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