Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates

Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Ryo Hattori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype controllability of the epilayer significantly depends on the growth process conditions. By optimizing them, polytype mixing in the epilayers can be completely suppressed. It is shown that the density of basal plane dislocations in the epilayers is much less than in the substrates due to on-axis growth. SIMS analysis showed that the concentrations of trace impurity elements (B,Al,Ti,V,Cr,Fe,Ni,P) in the epilayers are under lower detection limit. The only impurity is nitrogen resulting in an n-type layer. Carrier concentrations N d-N a ranging from high 10 16 to low 10 17cm -3 are achievable.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages137-140
Number of pages4
Volume615 617
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: 2008 Sep 72008 Sep 11

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)02555476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period08/9/708/9/11

Fingerprint

Liquid phase epitaxy
Epilayers
liquid phase epitaxy
Substrates
impurities
controllability
Impurities
secondary ion mass spectrometry
Trace Elements
liquid phases
Secondary ion mass spectrometry
Controllability
Carrier concentration
nitrogen
Nitrogen

Keywords

  • 4H-SiC
  • Homoepitaxial growth
  • Liquid phase epitaxy
  • On-axis

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kusunoki, K., Kamei, K., Yashiro, N., & Hattori, R. (2009). Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates. In Materials Science Forum (Vol. 615 617, pp. 137-140). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.137

Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates. / Kusunoki, Kazuhiko; Kamei, Kazuhito; Yashiro, Nobuyoshi; Hattori, Ryo.

Materials Science Forum. Vol. 615 617 2009. p. 137-140 (Materials Science Forum; Vol. 615 617).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kusunoki, K, Kamei, K, Yashiro, N & Hattori, R 2009, Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates. in Materials Science Forum. vol. 615 617, Materials Science Forum, vol. 615 617, pp. 137-140, 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008, Barcelona, Spain, 08/9/7. https://doi.org/10.4028/www.scientific.net/MSF.615-617.137
Kusunoki K, Kamei K, Yashiro N, Hattori R. Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates. In Materials Science Forum. Vol. 615 617. 2009. p. 137-140. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.615-617.137
Kusunoki, Kazuhiko ; Kamei, Kazuhito ; Yashiro, Nobuyoshi ; Hattori, Ryo. / Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates. Materials Science Forum. Vol. 615 617 2009. pp. 137-140 (Materials Science Forum).
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