Local environment of silicon in cubic boron nitride

Hidenobu Murata, Takashi Taniguchi, Shunichi Hishita, Tomoyuki Yamamoto, Fumiyasu Oba, Isao Tanaka

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Si-doped cubic boron nitride (c-BN) is synthesized at high pressure and high temperature, and the local environment of Si is investigated using X-ray absorption near edge structure (XANES) and first-principles calculations. Si-K XANES indicates that Si in c-BN is surrounded by four nitrogen atoms. According to first-principles calculations, the model for substitutional Si at the B site well reproduces experimental Si-K XANES, and it is energetically more favorable than substitutional Si at the N site. Both the present experimental and theoretical results indicate that Si in c-BN prefers the B site to the N site.

    Original languageEnglish
    Article number233502
    JournalJournal of Applied Physics
    Volume114
    Issue number23
    DOIs
    Publication statusPublished - 2013 Dec 21

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    boron nitrides
    silicon
    x rays
    nitrogen atoms
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Murata, H., Taniguchi, T., Hishita, S., Yamamoto, T., Oba, F., & Tanaka, I. (2013). Local environment of silicon in cubic boron nitride. Journal of Applied Physics, 114(23), [233502]. https://doi.org/10.1063/1.4849015

    Local environment of silicon in cubic boron nitride. / Murata, Hidenobu; Taniguchi, Takashi; Hishita, Shunichi; Yamamoto, Tomoyuki; Oba, Fumiyasu; Tanaka, Isao.

    In: Journal of Applied Physics, Vol. 114, No. 23, 233502, 21.12.2013.

    Research output: Contribution to journalArticle

    Murata, H, Taniguchi, T, Hishita, S, Yamamoto, T, Oba, F & Tanaka, I 2013, 'Local environment of silicon in cubic boron nitride', Journal of Applied Physics, vol. 114, no. 23, 233502. https://doi.org/10.1063/1.4849015
    Murata H, Taniguchi T, Hishita S, Yamamoto T, Oba F, Tanaka I. Local environment of silicon in cubic boron nitride. Journal of Applied Physics. 2013 Dec 21;114(23). 233502. https://doi.org/10.1063/1.4849015
    Murata, Hidenobu ; Taniguchi, Takashi ; Hishita, Shunichi ; Yamamoto, Tomoyuki ; Oba, Fumiyasu ; Tanaka, Isao. / Local environment of silicon in cubic boron nitride. In: Journal of Applied Physics. 2013 ; Vol. 114, No. 23.
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    AU - Tanaka, Isao

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