Local-field-enhancement model of DRAM retention failure

A. Hiraiwa, M. Ogasawara, N. Natsuaki, Y. Itoh, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

43 Citations (Scopus)

Abstract

We have developed the local-field-enhancement model of the tail component of DRAM (dynamic random access memory) retention-time distribution. The model is in excellent agreement with experiments and proposes to control not the number but the energy-level distribution of traps and to reduce the space-charge-region-field variation together with the field itself to increase the retention time.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherIEEE
Pages157-160
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

Other

OtherProceedings of the 1998 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period98/12/698/12/9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Hiraiwa, A., Ogasawara, M., Natsuaki, N., Itoh, Y., & Iwai, H. (1998). Local-field-enhancement model of DRAM retention failure. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 157-160). IEEE.