Local structure around in atoms in InxGa1-xN multi-quantum-wells studied by XAFS

Shinya Sasaki, Takafumi Miyanaga, Takashi Azuhata, Tomoya Uruga, Hajime Tanida, Shigefusa F. Chichibu, Takayuki Sota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.

Original languageEnglish
Title of host publicationX-RAY ABSORPTION FINE STRUCTURE - XAFS13
Subtitle of host publication13th International Conference
Number of pages3
Publication statusPublished - 2007
EventX-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference - Stanford, CA, United States
Duration: 2006 Jul 92006 Jul 14

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


ConferenceX-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference
Country/TerritoryUnited States
CityStanford, CA


  • InGaN
  • LED
  • Multiple-quantum-well

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation


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