Abstract
The origin of the extremely large p-n junction leakage current which is due neither to generation-recombination current nor diffusion current is investigated. It is shown to be due to the local Zener effect, induced by the local enhancement of the electric field around precipitates in the depletion layer. A new approach to suppress this Zener effect by controlling the profile of the electric field is also proposed.
| Original language | English |
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| Title of host publication | Conference on Solid State Devices and Materials |
| Place of Publication | Tokyo, Japan |
| Publisher | Publ by Business Cent for Acad Soc Japan |
| Pages | 73-75 |
| Number of pages | 3 |
| Publication status | Published - 1992 |
| Externally published | Yes |
| Event | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28 |
Other
| Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
|---|---|
| City | Tsukuba, Jpn |
| Period | 92/8/26 → 92/8/28 |
ASJC Scopus subject areas
- Engineering(all)