Local Zener phenomenon. A mechanism of p-n junction leakage current

Kiyonori Ohyu, Atsushi Hiraiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The origin of the extremely large p-n junction leakage current which is due neither to generation-recombination current nor diffusion current is investigated. It is shown to be due to the local Zener effect, induced by the local enhancement of the electric field around precipitates in the depletion layer. A new approach to suppress this Zener effect by controlling the profile of the electric field is also proposed.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages73-75
Number of pages3
Publication statusPublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ohyu, K., & Hiraiwa, A. (1992). Local Zener phenomenon. A mechanism of p-n junction leakage current. In Conference on Solid State Devices and Materials (pp. 73-75). Publ by Business Cent for Acad Soc Japan.