Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well

S. L. Lu, L. F. Bian, M. Uesugi, H. Nosho, Atsushi Tackeuchi, Z. C. Niu

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    Abstract

    We have investigated the exciton spin relaxation in a GaInNAsGaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers.

    Original languageEnglish
    Article number051908
    JournalApplied Physics Letters
    Volume92
    Issue number5
    DOIs
    Publication statusPublished - 2008

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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