Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, S. P. Denbaars, J. S. Speck, S. Nakamura, U. K. Mishra, Takayuki Sota, S. F. Chichibu

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    Abstract

    Beneficial effects of the localized excitons were confirmed in nonpolar (11 2- 0) Inx Ga1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.

    Original languageEnglish
    Article number151918
    Pages (from-to)1-3
    Number of pages3
    JournalApplied Physics Letters
    Volume86
    Issue number15
    DOIs
    Publication statusPublished - 2005

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    templates
    excitons
    quantum wells
    photoluminescence
    radiative lifetime
    energy
    decay
    polarization

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Onuma, T., Chakraborty, A., Haskell, B. A., Keller, S., Denbaars, S. P., Speck, J. S., ... Chichibu, S. F. (2005). Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth. Applied Physics Letters, 86(15), 1-3. [151918]. https://doi.org/10.1063/1.1900947

    Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth. / Onuma, T.; Chakraborty, A.; Haskell, B. A.; Keller, S.; Denbaars, S. P.; Speck, J. S.; Nakamura, S.; Mishra, U. K.; Sota, Takayuki; Chichibu, S. F.

    In: Applied Physics Letters, Vol. 86, No. 15, 151918, 2005, p. 1-3.

    Research output: Contribution to journalArticle

    Onuma, T, Chakraborty, A, Haskell, BA, Keller, S, Denbaars, SP, Speck, JS, Nakamura, S, Mishra, UK, Sota, T & Chichibu, SF 2005, 'Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth', Applied Physics Letters, vol. 86, no. 15, 151918, pp. 1-3. https://doi.org/10.1063/1.1900947
    Onuma, T. ; Chakraborty, A. ; Haskell, B. A. ; Keller, S. ; Denbaars, S. P. ; Speck, J. S. ; Nakamura, S. ; Mishra, U. K. ; Sota, Takayuki ; Chichibu, S. F. / Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth. In: Applied Physics Letters. 2005 ; Vol. 86, No. 15. pp. 1-3.
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    abstract = "Beneficial effects of the localized excitons were confirmed in nonpolar (11 2- 0) Inx Ga1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25{\%} and 17{\%} for the peaks at 2.92 and 2.60 eV, respectively.",
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    AU - Haskell, B. A.

    AU - Keller, S.

    AU - Denbaars, S. P.

    AU - Speck, J. S.

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    AU - Chichibu, S. F.

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    AB - Beneficial effects of the localized excitons were confirmed in nonpolar (11 2- 0) Inx Ga1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.

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