Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

Shigefusa F. Chichibu*, Takashi Azuhata, Takayuki Sota, Takashi Mukai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.

Original languageEnglish
Pages (from-to)341-343
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2001 Jul 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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