Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

Shigefusa F. Chichibu, Takashi Azuhata, Takayuki Sota, Takashi Mukai

    Research output: Contribution to journalArticle

    24 Citations (Scopus)

    Abstract

    In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.

    Original languageEnglish
    Pages (from-to)341-343
    Number of pages3
    JournalApplied Physics Letters
    Volume79
    Issue number3
    DOIs
    Publication statusPublished - 2001 Jul 16

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    quantum well lasers
    semiconductor lasers
    excitons
    spontaneous emission
    quantum wells
    shift

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm. / Chichibu, Shigefusa F.; Azuhata, Takashi; Sota, Takayuki; Mukai, Takashi.

    In: Applied Physics Letters, Vol. 79, No. 3, 16.07.2001, p. 341-343.

    Research output: Contribution to journalArticle

    Chichibu, Shigefusa F. ; Azuhata, Takashi ; Sota, Takayuki ; Mukai, Takashi. / Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm. In: Applied Physics Letters. 2001 ; Vol. 79, No. 3. pp. 341-343.
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