Localized excitons in InGaN

S. Chichibu; T. Deguchi; T. Sota; K. Wada; S. Nakamura

Localized excitons in InGaN

S. Chichibu, T. Deguchi, T. Sota, K. Wada, S. Nakamura

Research output: Contribution to journal › Conference article › peer-review

Abstract

Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The In_xGa_1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained In_xGa_1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.

Original language	English
Pages (from-to)	613-624
Number of pages	12
Journal	Materials Research Society Symposium - Proceedings
Volume	482
Publication status	Published - 1997 Dec 1
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1997 Dec 1 → 1997 Dec 4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Localized excitons in InGaN",

abstract = "Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The InxGa1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained InxGa1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.",

author = "S. Chichibu and T. Deguchi and T. Sota and K. Wada and S. Nakamura",

year = "1997",

month = dec,

day = "1",

language = "English",

volume = "482",

pages = "613--624",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

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TY - JOUR

T1 - Localized excitons in InGaN

AU - Chichibu, S.

AU - Deguchi, T.

AU - Sota, T.

AU - Wada, K.

AU - Nakamura, S.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The InxGa1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained InxGa1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.

AB - Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The InxGa1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained InxGa1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.

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M3 - Conference article

AN - SCOPUS:0031365594

VL - 482

SP - 613

EP - 624

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -