Abstract
Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The In xGa 1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained In xGa 1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | S.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith |
| Publisher | MRS |
| Pages | 613-624 |
| Number of pages | 12 |
| Volume | 482 |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1997 Dec 1 → 1997 Dec 4 |
Other
| Other | Proceedings of the 1997 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 97/12/1 → 97/12/4 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Localized excitons in InGaN. / Chichibu, S.; Deguchi, T.; Sota, Takayuki; Wada, K.; Nakamura, S.
Materials Research Society Symposium - Proceedings. ed. / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. Vol. 482 MRS, 1997. p. 613-624.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Localized excitons in InGaN
AU - Chichibu, S.
AU - Deguchi, T.
AU - Sota, Takayuki
AU - Wada, K.
AU - Nakamura, S.
PY - 1997
Y1 - 1997
N2 - Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The In xGa 1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained In xGa 1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.
AB - Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The In xGa 1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained In xGa 1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.
UR - http://www.scopus.com/inward/record.url?scp=0031365594&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031365594&partnerID=8YFLogxK
M3 - Conference contribution
VL - 482
SP - 613
EP - 624
BT - Materials Research Society Symposium - Proceedings
A2 - Phillpot, S.R.
A2 - Bristowe, P.D.
A2 - Stroud, D.G.
A2 - Smith, J.R.
PB - MRS
ER -