Abstract
Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The InxGa1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained InxGa1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.
| Original language | English |
|---|---|
| Pages (from-to) | 613-624 |
| Number of pages | 12 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 482 |
| Publication status | Published - 1997 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1997 Dec 1 → 1997 Dec 4 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Chichibu, S., Deguchi, T., Sota, T., Wada, K., & Nakamura, S. (1997). Localized excitons in InGaN. Materials Research Society Symposium - Proceedings, 482, 613-624.