Localized excitons in InGaN

S. Chichibu, T. Deguchi, Takayuki Sota, K. Wada, S. Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The In xGa 1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained In xGa 1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
PublisherMRS
Pages613-624
Number of pages12
Volume482
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Dec 11997 Dec 4

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period97/12/197/12/4

Fingerprint

Excitons
Semiconductor quantum wells
Aluminum Oxide
Epitaxial layers
Sapphire
Energy gap
Kinetics
Substrates
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chichibu, S., Deguchi, T., Sota, T., Wada, K., & Nakamura, S. (1997). Localized excitons in InGaN. In S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (Eds.), Materials Research Society Symposium - Proceedings (Vol. 482, pp. 613-624). MRS.

Localized excitons in InGaN. / Chichibu, S.; Deguchi, T.; Sota, Takayuki; Wada, K.; Nakamura, S.

Materials Research Society Symposium - Proceedings. ed. / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. Vol. 482 MRS, 1997. p. 613-624.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chichibu, S, Deguchi, T, Sota, T, Wada, K & Nakamura, S 1997, Localized excitons in InGaN. in SR Phillpot, PD Bristowe, DG Stroud & JR Smith (eds), Materials Research Society Symposium - Proceedings. vol. 482, MRS, pp. 613-624, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 97/12/1.
Chichibu S, Deguchi T, Sota T, Wada K, Nakamura S. Localized excitons in InGaN. In Phillpot SR, Bristowe PD, Stroud DG, Smith JR, editors, Materials Research Society Symposium - Proceedings. Vol. 482. MRS. 1997. p. 613-624
Chichibu, S. ; Deguchi, T. ; Sota, Takayuki ; Wada, K. ; Nakamura, S. / Localized excitons in InGaN. Materials Research Society Symposium - Proceedings. editor / S.R. Phillpot ; P.D. Bristowe ; D.G. Stroud ; J.R. Smith. Vol. 482 MRS, 1997. pp. 613-624
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