Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes

S. F. Chichibu, T. Azuhata, Takayuki Sota, T. Mukai, S. Nakamura

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    Abstract

    Optical properties of the InGaN single-quantum-well amber light-emitting-diodes were investigated to verify the importance of localized quantum well (QW) excitons in their spontaneous emission mechanisms. The internal piezoelectric field (FPZ) across the QW of the order of 1.4 MV/cm was confirmed to point from the surface to the substrate. Transmittance and photovoltaic spectra exhibited a broad band tail state, and the emission lifetime increased with decreasing detection photon energy. The electroluminescence spectra did not show remarkable energy shift between 10 and 300 K. The spectra exhibited an exponential tail and the higher energy portion increased more rapidly than that of the lower energy one, reflecting a thermal distribution of the localized carriers within the tail states. Since the well thickness is only 2.5 nm and is atomically flat, the device is considered to exhibit reasonably efficient emission with the external quantum efficiency of 5% at 20 mA in spite of the presence of FPZ and large number of threading dislocations due to radiative decay of the localized QW excitons.

    Original languageEnglish
    Pages (from-to)5153-5157
    Number of pages5
    JournalJournal of Applied Physics
    Volume88
    Issue number9
    Publication statusPublished - 2000 Nov 1

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    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Chichibu, S. F., Azuhata, T., Sota, T., Mukai, T., & Nakamura, S. (2000). Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes. Journal of Applied Physics, 88(9), 5153-5157.