Long-period-grating-loaded semiconductor separate-confinement heterostructure waveguide for polarization-independent gain-equalizing device

Hiromasa Tabuchi, Toshitaka Abe, Kenichi Terada, Katsuyuki Utaka

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    We report the notch filtering characteristics of an InGaAsP/InP long-period-grating-loaded separate-confinement heterostructure waveguide for a polarization-independent gain-equalizing device. We discussed the structure design and confirmed the fundamental characteristics of the device experimentally.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume44
    Issue number46-49
    DOIs
    Publication statusPublished - 2005 Nov 25

    Fingerprint

    Plasma confinement
    Heterojunctions
    Waveguides
    gratings
    Polarization
    Semiconductor materials
    waveguides
    polarization
    notches

    Keywords

    • Gain-equalizing
    • InGaAsP
    • Long-period grating
    • Polarization-independent
    • Separate-confinement heterostoructure

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Long-period-grating-loaded semiconductor separate-confinement heterostructure waveguide for polarization-independent gain-equalizing device. / Tabuchi, Hiromasa; Abe, Toshitaka; Terada, Kenichi; Utaka, Katsuyuki.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 46-49, 25.11.2005.

    Research output: Contribution to journalArticle

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