Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers

G. Kudlek, J. Hollandt, N. Presser, J. Gutowski, D. R. Menke, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

MBE-grown ZnSe epilayers released from their GaAs substrates exhibit thermally induced absorptive optical bistability of high contrast ratios and low switching powers in a wide temperature range up to room temperature. For increasing sample thickness or for enhanced reflection realized by inserting the samples into a resonator, counteracting dispersive switching becomes visible. The interplay of both the absorptive and dispersive effects is studied for different samples and varied experimental parameters. Long-term stability of the samples with regard to all switching effects makes them promising candidates for application studies.

Original languageEnglish
Pages (from-to)381-385
Number of pages5
JournalSuperlattices and Microstructures
Volume8
Issue number4
DOIs
Publication statusPublished - 1990
Externally publishedYes

Fingerprint

Optical bistability
optical bistability
Epilayers
Molecular beam epitaxy
Resonators
Temperature
resonators
Substrates
room temperature
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers. / Kudlek, G.; Hollandt, J.; Presser, N.; Gutowski, J.; Menke, D. R.; Kobayashi, Masakazu; Gunshor, R. L.

In: Superlattices and Microstructures, Vol. 8, No. 4, 1990, p. 381-385.

Research output: Contribution to journalArticle

Kudlek, G. ; Hollandt, J. ; Presser, N. ; Gutowski, J. ; Menke, D. R. ; Kobayashi, Masakazu ; Gunshor, R. L. / Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers. In: Superlattices and Microstructures. 1990 ; Vol. 8, No. 4. pp. 381-385.
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