Longitudinal-Mode Behaviour Of λ/4-Shifted InGaAsP/InP DFB Lasers

K. Utaka; S. Akiba; K. Sakai; Y. Matsushima

doi:10.1049/el:19850262

Longitudinal-Mode Behaviour Of λ/4-Shifted InGaAsP/InP DFB Lasers

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Longitudinal-mode behaviour of λ/4-shifted InGaAsP/lnP DFB lasers fabricated by the nega-posi method have been studied. The deviation of the main mode from the centre of the stopband, which was attributed to an accidental additional phase shift introduced around the λ/4-shifted position, was related to the intensity ratio of the main to side mode below the threshold, and it was much larger compared to conventional DFB lasers for the devices with small deviation. The intensity ratio above the threshold was about 35 dB or more in 100% direct modulation for most of the lasers.

Original language	English
Pages (from-to)	367-369
Number of pages	3
Journal	Electronics Letters
Volume	21
Issue number	9
DOIs	https://doi.org/10.1049/el:19850262
Publication status	Published - 1985 Jan 1
Externally published	Yes

Keywords

Lasers and laser applications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19850262

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title = "Longitudinal-Mode Behaviour Of λ/4-Shifted InGaAsP/InP DFB Lasers",

abstract = "Longitudinal-mode behaviour of λ/4-shifted InGaAsP/lnP DFB lasers fabricated by the nega-posi method have been studied. The deviation of the main mode from the centre of the stopband, which was attributed to an accidental additional phase shift introduced around the λ/4-shifted position, was related to the intensity ratio of the main to side mode below the threshold, and it was much larger compared to conventional DFB lasers for the devices with small deviation. The intensity ratio above the threshold was about 35 dB or more in 100% direct modulation for most of the lasers.",

keywords = "Lasers and laser applications, Semiconductor lasers",

author = "K. Utaka and S. Akiba and K. Sakai and Y. Matsushima",

year = "1985",

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doi = "10.1049/el:19850262",

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AU - Utaka, K.

AU - Akiba, S.

AU - Sakai, K.

AU - Matsushima, Y.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - Longitudinal-mode behaviour of λ/4-shifted InGaAsP/lnP DFB lasers fabricated by the nega-posi method have been studied. The deviation of the main mode from the centre of the stopband, which was attributed to an accidental additional phase shift introduced around the λ/4-shifted position, was related to the intensity ratio of the main to side mode below the threshold, and it was much larger compared to conventional DFB lasers for the devices with small deviation. The intensity ratio above the threshold was about 35 dB or more in 100% direct modulation for most of the lasers.

AB - Longitudinal-mode behaviour of λ/4-shifted InGaAsP/lnP DFB lasers fabricated by the nega-posi method have been studied. The deviation of the main mode from the centre of the stopband, which was attributed to an accidental additional phase shift introduced around the λ/4-shifted position, was related to the intensity ratio of the main to side mode below the threshold, and it was much larger compared to conventional DFB lasers for the devices with small deviation. The intensity ratio above the threshold was about 35 dB or more in 100% direct modulation for most of the lasers.

KW - Lasers and laser applications

KW - Semiconductor lasers

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DO - 10.1049/el:19850262

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Longitudinal-Mode Behaviour Of λ/4-Shifted InGaAsP/InP DFB Lasers

Abstract

Keywords

ASJC Scopus subject areas

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