Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures

Shunichi Muto, Tsuguo Inata, Atsushi Tackeuchi, Yoshihiro Sugiyama, Toshio Fujii

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We discuss the electron tunneling time observed in a new AlGaAs/GaAs superlattice structure, the tunneling bi-quantum well (TBQ). To calculate the nonresonant tunneling time, we made experiments on resonant tunneling to confirm that the 60% rule of conduction-band discontinuity accurately evaluates the free tunneling probability of electrons. We found that the observed recovery time agrees quite well with the calculated longitudinal optical phonon emission tunneling time for thin (≤ 10 monolayers) barriers.

Original languageEnglish
Pages (from-to)2393-2395
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number21
DOIs
Publication statusPublished - 1991
Externally publishedYes

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quantum wells
resonant tunneling
electron tunneling
aluminum gallium arsenides
discontinuity
conduction bands
recovery
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures. / Muto, Shunichi; Inata, Tsuguo; Tackeuchi, Atsushi; Sugiyama, Yoshihiro; Fujii, Toshio.

In: Applied Physics Letters, Vol. 58, No. 21, 1991, p. 2393-2395.

Research output: Contribution to journalArticle

Muto, Shunichi ; Inata, Tsuguo ; Tackeuchi, Atsushi ; Sugiyama, Yoshihiro ; Fujii, Toshio. / Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures. In: Applied Physics Letters. 1991 ; Vol. 58, No. 21. pp. 2393-2395.
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