Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET

Yoshinori Sasaki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    19 Citations (Scopus)

    Abstract

    We have investigated drift and hysteresis characteristics on an electrolyte-solution-gate field-effect transistor (SGFET) with a unique structure using polycrystalline diamond and verified the possibility as chemical sensors and biosensors. Silicon-based ion-sensitive field effect transistors (ISFETs) have not yet solved such time-related issues due to the chemical instability of the passivation layer covering on SiO2 and that is why the Si-ISFET is not wide spread. First of all, we have confirmed that the pH sensitivities of oxygen-and amine-terminated diamond surfaces are 20 mV/pH and 48 mV/pH, respectively, whereas that of hydrogen-terminated surface is only 7 mV/pH. Drift characteristics measurement on diamond SGFET reveals that diamond SGFETs with any surface termination are more stable in electrolyte solution than Si-ISFETs with typical passivation membranes. Hysteresis width, which is known to be a more serious cause of measurement error than drift, proves to be 0.39mV on amine-terminated SGFET. This is less than 1/10 compared with common Si 3N4-ISFET. These results can be explained by high tolerance of diamond against ions in solution due to intrinsic chemical stability and densely packed structure of diamond itself. In this work, we bear out that diamond SGFET is a promising platform for highly sensitive biosensor application owing to the superiority in terms of time response and resulting measurement accuracy.

    Original languageEnglish
    Article number374020
    JournalJournal of Physics D: Applied Physics
    Volume43
    Issue number37
    DOIs
    Publication statusPublished - 2010 Sep 22

    Fingerprint

    Diamond
    Field effect transistors
    Electrolytes
    Hysteresis
    Diamonds
    Ion sensitive field effect transistors
    field effect transistors
    Gates (transistor)
    diamonds
    hysteresis
    electrolytes
    Passivation
    Biosensors
    Amines
    ions
    bioinstrumentation
    passivity
    amines
    Chemical stability
    Silicon

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Acoustics and Ultrasonics
    • Surfaces, Coatings and Films

    Cite this

    Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET. / Sasaki, Yoshinori; Kawarada, Hiroshi.

    In: Journal of Physics D: Applied Physics, Vol. 43, No. 37, 374020, 22.09.2010.

    Research output: Contribution to journalArticle

    @article{876ca8619d1b4900b69909f01b7cab92,
    title = "Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET",
    abstract = "We have investigated drift and hysteresis characteristics on an electrolyte-solution-gate field-effect transistor (SGFET) with a unique structure using polycrystalline diamond and verified the possibility as chemical sensors and biosensors. Silicon-based ion-sensitive field effect transistors (ISFETs) have not yet solved such time-related issues due to the chemical instability of the passivation layer covering on SiO2 and that is why the Si-ISFET is not wide spread. First of all, we have confirmed that the pH sensitivities of oxygen-and amine-terminated diamond surfaces are 20 mV/pH and 48 mV/pH, respectively, whereas that of hydrogen-terminated surface is only 7 mV/pH. Drift characteristics measurement on diamond SGFET reveals that diamond SGFETs with any surface termination are more stable in electrolyte solution than Si-ISFETs with typical passivation membranes. Hysteresis width, which is known to be a more serious cause of measurement error than drift, proves to be 0.39mV on amine-terminated SGFET. This is less than 1/10 compared with common Si 3N4-ISFET. These results can be explained by high tolerance of diamond against ions in solution due to intrinsic chemical stability and densely packed structure of diamond itself. In this work, we bear out that diamond SGFET is a promising platform for highly sensitive biosensor application owing to the superiority in terms of time response and resulting measurement accuracy.",
    author = "Yoshinori Sasaki and Hiroshi Kawarada",
    year = "2010",
    month = "9",
    day = "22",
    doi = "10.1088/0022-3727/43/37/374020",
    language = "English",
    volume = "43",
    journal = "Journal Physics D: Applied Physics",
    issn = "0022-3727",
    publisher = "IOP Publishing Ltd.",
    number = "37",

    }

    TY - JOUR

    T1 - Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET

    AU - Sasaki, Yoshinori

    AU - Kawarada, Hiroshi

    PY - 2010/9/22

    Y1 - 2010/9/22

    N2 - We have investigated drift and hysteresis characteristics on an electrolyte-solution-gate field-effect transistor (SGFET) with a unique structure using polycrystalline diamond and verified the possibility as chemical sensors and biosensors. Silicon-based ion-sensitive field effect transistors (ISFETs) have not yet solved such time-related issues due to the chemical instability of the passivation layer covering on SiO2 and that is why the Si-ISFET is not wide spread. First of all, we have confirmed that the pH sensitivities of oxygen-and amine-terminated diamond surfaces are 20 mV/pH and 48 mV/pH, respectively, whereas that of hydrogen-terminated surface is only 7 mV/pH. Drift characteristics measurement on diamond SGFET reveals that diamond SGFETs with any surface termination are more stable in electrolyte solution than Si-ISFETs with typical passivation membranes. Hysteresis width, which is known to be a more serious cause of measurement error than drift, proves to be 0.39mV on amine-terminated SGFET. This is less than 1/10 compared with common Si 3N4-ISFET. These results can be explained by high tolerance of diamond against ions in solution due to intrinsic chemical stability and densely packed structure of diamond itself. In this work, we bear out that diamond SGFET is a promising platform for highly sensitive biosensor application owing to the superiority in terms of time response and resulting measurement accuracy.

    AB - We have investigated drift and hysteresis characteristics on an electrolyte-solution-gate field-effect transistor (SGFET) with a unique structure using polycrystalline diamond and verified the possibility as chemical sensors and biosensors. Silicon-based ion-sensitive field effect transistors (ISFETs) have not yet solved such time-related issues due to the chemical instability of the passivation layer covering on SiO2 and that is why the Si-ISFET is not wide spread. First of all, we have confirmed that the pH sensitivities of oxygen-and amine-terminated diamond surfaces are 20 mV/pH and 48 mV/pH, respectively, whereas that of hydrogen-terminated surface is only 7 mV/pH. Drift characteristics measurement on diamond SGFET reveals that diamond SGFETs with any surface termination are more stable in electrolyte solution than Si-ISFETs with typical passivation membranes. Hysteresis width, which is known to be a more serious cause of measurement error than drift, proves to be 0.39mV on amine-terminated SGFET. This is less than 1/10 compared with common Si 3N4-ISFET. These results can be explained by high tolerance of diamond against ions in solution due to intrinsic chemical stability and densely packed structure of diamond itself. In this work, we bear out that diamond SGFET is a promising platform for highly sensitive biosensor application owing to the superiority in terms of time response and resulting measurement accuracy.

    UR - http://www.scopus.com/inward/record.url?scp=78249275192&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=78249275192&partnerID=8YFLogxK

    U2 - 10.1088/0022-3727/43/37/374020

    DO - 10.1088/0022-3727/43/37/374020

    M3 - Article

    AN - SCOPUS:78249275192

    VL - 43

    JO - Journal Physics D: Applied Physics

    JF - Journal Physics D: Applied Physics

    SN - 0022-3727

    IS - 37

    M1 - 374020

    ER -