Low-drive-voltage Ti: LiNbO3 Mach-Zehnder modulator using a coupled line

T. Namiki, N. Mekada, H. Hamano, T. Yamane, M. Seino, Hirochika Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A modulator that uses a coupled line as a traveling-wave electrode to reduce the drive voltage is discussed. For modulation, complementary signals with equal amplitude and 180° out of phase are applied to the coupled line. The modulator was fabricated on a z-cut LiNbO3 wafer for use at 1.55 μm. Wavegiudes were formed by diffusing 90-nm-thick, 7-μm-wide Ti stripes for 8 h 1050°C in wet O2. The 500-nm-thick SiO2 buffer layer was formed by electron-beam evaporation. The coupled line used plated gold electrodes 9 μm wide, 5 μm thick, and 20 mm long. The two lines were 12 μm apart. The drive voltage is 27 V at 100 Hz. The insertion loss of the microwave energy increases slowly as the frequency rises. It is -3 dB at 2.5 GHz and -6 dB at 10 GHz. The 3-dB bandwidth of the modulation response exceeds 5 GHz. The bandwidth is limited by the loss of microwave energy and velocity mismatch. It can be expanded by optimizing the coupled linear structure and using a thicker buffer layer and electrodes. This modulator shows promise for use in broadband and low-drive-voltage modulation.

Original languageEnglish
Title of host publicationTechnical Digest Series
Place of PublicationWashington, DC, United States
PublisherPubl by Optical Soc of America
Pages34
Number of pages1
ISBN (Print)1557521123
Publication statusPublished - 1990
Externally publishedYes
Event1990 Optical Fiber Communications Conference - OFC'90 - San Francisco, CA, USA
Duration: 1990 Jan 221990 Jan 26

Other

Other1990 Optical Fiber Communications Conference - OFC'90
CitySan Francisco, CA, USA
Period90/1/2290/1/26

Fingerprint

Modulators
Mach number
Modulation
Buffer layers
Electrodes
Electric potential
Microwaves
Bandwidth
Insertion losses
Electron beams
Evaporation
Gold

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Namiki, T., Mekada, N., Hamano, H., Yamane, T., Seino, M., & Nakajima, H. (1990). Low-drive-voltage Ti: LiNbO3 Mach-Zehnder modulator using a coupled line. In Technical Digest Series (pp. 34). Washington, DC, United States: Publ by Optical Soc of America.

Low-drive-voltage Ti : LiNbO3 Mach-Zehnder modulator using a coupled line. / Namiki, T.; Mekada, N.; Hamano, H.; Yamane, T.; Seino, M.; Nakajima, Hirochika.

Technical Digest Series. Washington, DC, United States : Publ by Optical Soc of America, 1990. p. 34.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Namiki, T, Mekada, N, Hamano, H, Yamane, T, Seino, M & Nakajima, H 1990, Low-drive-voltage Ti: LiNbO3 Mach-Zehnder modulator using a coupled line. in Technical Digest Series. Publ by Optical Soc of America, Washington, DC, United States, pp. 34, 1990 Optical Fiber Communications Conference - OFC'90, San Francisco, CA, USA, 90/1/22.
Namiki T, Mekada N, Hamano H, Yamane T, Seino M, Nakajima H. Low-drive-voltage Ti: LiNbO3 Mach-Zehnder modulator using a coupled line. In Technical Digest Series. Washington, DC, United States: Publ by Optical Soc of America. 1990. p. 34
Namiki, T. ; Mekada, N. ; Hamano, H. ; Yamane, T. ; Seino, M. ; Nakajima, Hirochika. / Low-drive-voltage Ti : LiNbO3 Mach-Zehnder modulator using a coupled line. Technical Digest Series. Washington, DC, United States : Publ by Optical Soc of America, 1990. pp. 34
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N2 - A modulator that uses a coupled line as a traveling-wave electrode to reduce the drive voltage is discussed. For modulation, complementary signals with equal amplitude and 180° out of phase are applied to the coupled line. The modulator was fabricated on a z-cut LiNbO3 wafer for use at 1.55 μm. Wavegiudes were formed by diffusing 90-nm-thick, 7-μm-wide Ti stripes for 8 h 1050°C in wet O2. The 500-nm-thick SiO2 buffer layer was formed by electron-beam evaporation. The coupled line used plated gold electrodes 9 μm wide, 5 μm thick, and 20 mm long. The two lines were 12 μm apart. The drive voltage is 27 V at 100 Hz. The insertion loss of the microwave energy increases slowly as the frequency rises. It is -3 dB at 2.5 GHz and -6 dB at 10 GHz. The 3-dB bandwidth of the modulation response exceeds 5 GHz. The bandwidth is limited by the loss of microwave energy and velocity mismatch. It can be expanded by optimizing the coupled linear structure and using a thicker buffer layer and electrodes. This modulator shows promise for use in broadband and low-drive-voltage modulation.

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