Low-energy ion scattering from the Si(001) surface

M. Aono; Y. Hou; C. Oshima; Y. Ishizawa

doi:10.1103/PhysRevLett.49.567

Low-energy ion scattering from the Si(001) surface

M. Aono, Y. Hou, C. Oshima, Y. Ishizawa

Research output: Contribution to journal › Article › peer-review

166 Citations (Scopus)

Abstract

The structure of a clean Si(001) surface has been studied by a specialized technique in low-energy ion scattering spectroscopy. It has been found that (1) the surface is dimerized, and (2) the intradimer atomic distance parallel to the surface is 2.4 ± 0.1.

Original language	English
Pages (from-to)	567-570
Number of pages	4
Journal	Physical Review Letters
Volume	49
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.49.567
Publication status	Published - 1982

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The structure of a clean Si(001) surface has been studied by a specialized technique in low-energy ion scattering spectroscopy. It has been found that (1) the surface is dimerized, and (2) the intradimer atomic distance parallel to the surface is 2.4 ± 0.1.",

author = "M. Aono and Y. Hou and C. Oshima and Y. Ishizawa",

year = "1982",

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AU - Hou, Y.

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AU - Ishizawa, Y.

PY - 1982

Y1 - 1982

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AB - The structure of a clean Si(001) surface has been studied by a specialized technique in low-energy ion scattering spectroscopy. It has been found that (1) the surface is dimerized, and (2) the intradimer atomic distance parallel to the surface is 2.4 ± 0.1.

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JF - Physical Review Letters

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Low-energy ion scattering from the Si(001) surface

Abstract

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