Low-energy ion scattering from the Si(001) surface

M. Aono, Y. Hou, C. Oshima, Y. Ishizawa

    Research output: Contribution to journalArticle

    165 Citations (Scopus)

    Abstract

    The structure of a clean Si(001) surface has been studied by a specialized technique in low-energy ion scattering spectroscopy. It has been found that (1) the surface is dimerized, and (2) the intradimer atomic distance parallel to the surface is 2.4 ± 0.1.

    Original languageEnglish
    Pages (from-to)567-570
    Number of pages4
    JournalPhysical Review Letters
    Volume49
    Issue number8
    DOIs
    Publication statusPublished - 1982

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    ion scattering
    energy
    spectroscopy

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Low-energy ion scattering from the Si(001) surface. / Aono, M.; Hou, Y.; Oshima, C.; Ishizawa, Y.

    In: Physical Review Letters, Vol. 49, No. 8, 1982, p. 567-570.

    Research output: Contribution to journalArticle

    Aono, M, Hou, Y, Oshima, C & Ishizawa, Y 1982, 'Low-energy ion scattering from the Si(001) surface', Physical Review Letters, vol. 49, no. 8, pp. 567-570. https://doi.org/10.1103/PhysRevLett.49.567
    Aono, M. ; Hou, Y. ; Oshima, C. ; Ishizawa, Y. / Low-energy ion scattering from the Si(001) surface. In: Physical Review Letters. 1982 ; Vol. 49, No. 8. pp. 567-570.
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