Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor

Hirotaka Ohashi, Katsumi Tanigaki, Ryotaro Kumashiro, Syuji Sugihara, Nobuya Hiroshiba, Shigeru Kimura, Kenichi Kato, Masaki Takata

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22 Citations (Scopus)

Abstract

The relationship between the structure of C60 thin films and its field effect transistor (FET) properties was investigated. The low glancing angle x-ray diffraction method at a high energy beam facility was used for the study. It was observed that the FET characteristics consisting of C 60 thin films on Si substrates showed little dependence on the structural differences under conventional growth conditions. The trapping levels produced due to the chemical and physical adsorption of oxygen and water were found to influence the FET characteristics.

Original languageEnglish
Pages (from-to)520-522
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number4
DOIs
Publication statusPublished - 2004 Jan 26
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ohashi, H., Tanigaki, K., Kumashiro, R., Sugihara, S., Hiroshiba, N., Kimura, S., Kato, K., & Takata, M. (2004). Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor. Applied Physics Letters, 84(4), 520-522. https://doi.org/10.1063/1.1638882