Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface

Q. D. Qian, J. Qiu, M. R. Melloch, J. A. Cooper, L. A. Kolodziejski, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

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Abstract

The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10-8 A cm-2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.

Original languageEnglish
Pages (from-to)1359-1361
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number14
DOIs
Publication statusPublished - 1989
Externally publishedYes

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capacitance
capacitors
electric potential
depletion
electrical measurement
heterojunctions
molecular beam epitaxy
curves
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Qian, Q. D., Qiu, J., Melloch, M. R., Cooper, J. A., Kolodziejski, L. A., Kobayashi, M., & Gunshor, R. L. (1989). Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface. Applied Physics Letters, 54(14), 1359-1361. https://doi.org/10.1063/1.100715

Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface. / Qian, Q. D.; Qiu, J.; Melloch, M. R.; Cooper, J. A.; Kolodziejski, L. A.; Kobayashi, Masakazu; Gunshor, R. L.

In: Applied Physics Letters, Vol. 54, No. 14, 1989, p. 1359-1361.

Research output: Contribution to journalArticle

Qian, QD, Qiu, J, Melloch, MR, Cooper, JA, Kolodziejski, LA, Kobayashi, M & Gunshor, RL 1989, 'Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface', Applied Physics Letters, vol. 54, no. 14, pp. 1359-1361. https://doi.org/10.1063/1.100715
Qian, Q. D. ; Qiu, J. ; Melloch, M. R. ; Cooper, J. A. ; Kolodziejski, L. A. ; Kobayashi, Masakazu ; Gunshor, R. L. / Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface. In: Applied Physics Letters. 1989 ; Vol. 54, No. 14. pp. 1359-1361.
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