Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface

Q. D. Qian, J. Qiu, M. R. Melloch, J. A. Cooper, L. A. Kolodziejski, Masakazu Kobayashi, R. L. Gunshor

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Abstract

The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10-8 A cm-2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.

Original languageEnglish
Pages (from-to)1359-1361
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number14
DOIs
Publication statusPublished - 1989
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Qian, Q. D., Qiu, J., Melloch, M. R., Cooper, J. A., Kolodziejski, L. A., Kobayashi, M., & Gunshor, R. L. (1989). Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface. Applied Physics Letters, 54(14), 1359-1361. https://doi.org/10.1063/1.100715