Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region

Tai Tsuchizawa, Toshifumi Watanabe, Koji Yamada, Hiroshi Fukuda, Seiichi Itabashi, Junichi Fujikata, Akiko Gomyo, Jun Ushida, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10μm and a high-speed response of 17ps were demonstrated for the waveguide-integrated Si nano-PD.

Original languageEnglish
Pages (from-to)6739-6743
Number of pages5
JournalJapanese journal of applied physics
Volume47
Issue number8 PART 2
DOIs
Publication statusPublished - 2008 Aug 22
Externally publishedYes

Keywords

  • Branch
  • Multimode interference (MMI)
  • On-chip optical interconnect
  • Optical waveguide
  • Plasma-enhanced CVD
  • Propagation loss
  • Si photodiode
  • Silicon oxynitride (SiON)
  • Surface plasmon antenna

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Tsuchizawa, T., Watanabe, T., Yamada, K., Fukuda, H., Itabashi, S., Fujikata, J., Gomyo, A., Ushida, J., Okamoto, D., Nishi, K., & Ohashi, K. (2008). Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region. Japanese journal of applied physics, 47(8 PART 2), 6739-6743. https://doi.org/10.1143/JJAP.47.6739