Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region

Tai Tsuchizawa, Toshifumi Watanabe, Koji Yamada, Hiroshi Fukuda, Seiichi Itabashi, Junichi Fujikata, Akiko Gomyo, Jun Ushida, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10μm and a high-speed response of 17ps were demonstrated for the waveguide-integrated Si nano-PD.

Original languageEnglish
Pages (from-to)6739-6743
Number of pages5
JournalJapanese Journal of Applied Physics
Volume47
Issue number8 PART 2
DOIs
Publication statusPublished - 2008 Aug 22
Externally publishedYes

Fingerprint

oxynitrides
Waveguides
waveguides
Silicon
Wavelength
silicon
Photodiodes
wavelengths
photodiodes
Optical interconnects
Plasma enhanced chemical vapor deposition
Photocurrents
photocurrents
antennas
chips
high speed
vapor deposition
Antennas
interference
propagation

Keywords

  • Branch
  • Multimode interference (MMI)
  • On-chip optical interconnect
  • Optical waveguide
  • Plasma-enhanced CVD
  • Propagation loss
  • Si photodiode
  • Silicon oxynitride (SiON)
  • Surface plasmon antenna

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Tsuchizawa, T., Watanabe, T., Yamada, K., Fukuda, H., Itabashi, S., Fujikata, J., ... Ohashi, K. (2008). Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region. Japanese Journal of Applied Physics, 47(8 PART 2), 6739-6743. https://doi.org/10.1143/JJAP.47.6739

Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region. / Tsuchizawa, Tai; Watanabe, Toshifumi; Yamada, Koji; Fukuda, Hiroshi; Itabashi, Seiichi; Fujikata, Junichi; Gomyo, Akiko; Ushida, Jun; Okamoto, Daisuke; Nishi, Kenichi; Ohashi, Keishi.

In: Japanese Journal of Applied Physics, Vol. 47, No. 8 PART 2, 22.08.2008, p. 6739-6743.

Research output: Contribution to journalArticle

Tsuchizawa, T, Watanabe, T, Yamada, K, Fukuda, H, Itabashi, S, Fujikata, J, Gomyo, A, Ushida, J, Okamoto, D, Nishi, K & Ohashi, K 2008, 'Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region', Japanese Journal of Applied Physics, vol. 47, no. 8 PART 2, pp. 6739-6743. https://doi.org/10.1143/JJAP.47.6739
Tsuchizawa T, Watanabe T, Yamada K, Fukuda H, Itabashi S, Fujikata J et al. Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region. Japanese Journal of Applied Physics. 2008 Aug 22;47(8 PART 2):6739-6743. https://doi.org/10.1143/JJAP.47.6739
Tsuchizawa, Tai ; Watanabe, Toshifumi ; Yamada, Koji ; Fukuda, Hiroshi ; Itabashi, Seiichi ; Fujikata, Junichi ; Gomyo, Akiko ; Ushida, Jun ; Okamoto, Daisuke ; Nishi, Kenichi ; Ohashi, Keishi. / Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 8 PART 2. pp. 6739-6743.
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