Low-noise analog ASIC for silicon and CdTe sensors

Tetsuichi Kishishita, Goro Sato, Hirokazu Ikeda, Tadayuki Takahashi, Tatsuya Kiyuna, Yoshio Mito

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report on the recent development of a 32-channel low-noise analog front-end ASIC KW03 for hard X-ray and gamma-ray detectors. The ASIC aims for the readout of strip or pixel (pad) detectors utilizing silicon and cadmium telluride (CdTe) as detector materials. Each readout channel includes a charge-sensitive amplifier, bandpass filters and a sample-and-hold circuit. It also includes a leakage current compensation and pole-zero cancellation circuits to meet the various detector requirements. The equivalent noise level of a typical channel reaches 89 e-@0 pF (rms) and shows an input-capacitance characteristic of 7.5 e-/pF between 0 pF and 10 pF with a power consumption of 3 mW per channel. We mounted the ASIC on a low-temperature co-fired ceramic (LTCC) package and evaluated the spectral performance by combining with a CdTe diode detector. As a result, the gamma-ray spectrum of radioactive source 241Am was obtained with a good energy resolution of 2.23 keV (FWHM) for gamma rays of 59.5 keV at -20°C.

Original languageEnglish
Article number5603463
Pages (from-to)2971-2977
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number5 PART 3
DOIs
Publication statusPublished - 2010 Oct

Fingerprint

Cadmium telluride
cadmium tellurides
application specific integrated circuits
Application specific integrated circuits
low noise
Gamma rays
analogs
Detectors
Silicon
sensors
detectors
Sensors
silicon
readout
cancellation circuits
Poles and zeros
Silicon detectors
Networks (circuits)
gamma rays
Bandpass filters

Keywords

  • Analog front-end
  • ASIC
  • CdTe
  • gamma-ray
  • low-noise
  • VLSI
  • X-ray

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Kishishita, T., Sato, G., Ikeda, H., Takahashi, T., Kiyuna, T., & Mito, Y. (2010). Low-noise analog ASIC for silicon and CdTe sensors. IEEE Transactions on Nuclear Science, 57(5 PART 3), 2971-2977. [5603463]. https://doi.org/10.1109/TNS.2010.2063038

Low-noise analog ASIC for silicon and CdTe sensors. / Kishishita, Tetsuichi; Sato, Goro; Ikeda, Hirokazu; Takahashi, Tadayuki; Kiyuna, Tatsuya; Mito, Yoshio.

In: IEEE Transactions on Nuclear Science, Vol. 57, No. 5 PART 3, 5603463, 10.2010, p. 2971-2977.

Research output: Contribution to journalArticle

Kishishita, T, Sato, G, Ikeda, H, Takahashi, T, Kiyuna, T & Mito, Y 2010, 'Low-noise analog ASIC for silicon and CdTe sensors', IEEE Transactions on Nuclear Science, vol. 57, no. 5 PART 3, 5603463, pp. 2971-2977. https://doi.org/10.1109/TNS.2010.2063038
Kishishita T, Sato G, Ikeda H, Takahashi T, Kiyuna T, Mito Y. Low-noise analog ASIC for silicon and CdTe sensors. IEEE Transactions on Nuclear Science. 2010 Oct;57(5 PART 3):2971-2977. 5603463. https://doi.org/10.1109/TNS.2010.2063038
Kishishita, Tetsuichi ; Sato, Goro ; Ikeda, Hirokazu ; Takahashi, Tadayuki ; Kiyuna, Tatsuya ; Mito, Yoshio. / Low-noise analog ASIC for silicon and CdTe sensors. In: IEEE Transactions on Nuclear Science. 2010 ; Vol. 57, No. 5 PART 3. pp. 2971-2977.
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