Low on-resistance of GaN p-i-n vertical conducting diodes grown on 4H-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigated the resistance of conductive AlGaN buffer layers and the current-voltage characteristics of GaN p-i-n vertical conducting diodes on n-type 4H-SiC substrates grown by low-pressure metalorganic vapor-phase epitaxy. High Si doping of the AlGaN buffer layer at the AlGaN/SiC interface produces ohmic current-voltage characteristics in spite of the large band offset between AlGaN and 4H-SiC. Owing to the optimization of the AlGaN buffer layer, a low on-resistance (Ron) of 1.12 mΩ cm2 with high breakdown voltage (VB) of 300 V is obtained for a GaN p-i-n vertical conducting diode on a 4H-SiC substrate, leading to the figure of merit (V B2/Ron) of 80 MW/cm2, which is larger than that for the diode with the same structure on a 6H-SiC substrate (62 MW/cm2). This result indicates that 4H-SiC is preferable for fabricating GaN-based electronic devices with a low on-resistance and high breakdown voltage.

Original languageEnglish
Pages (from-to)2662-2665
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007
Externally publishedYes

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buffers
diodes
electrical faults
conduction
electric potential
vapor phase epitaxy
figure of merit
low pressure
optimization
electronics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Low on-resistance of GaN p-i-n vertical conducting diodes grown on 4H-SiC substrates. / Nishikawa, Atsushi; Kumakura, Kazuhide; Makimoto, Toshiki.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 2007, p. 2662-2665.

Research output: Contribution to journalArticle

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N2 - We investigated the resistance of conductive AlGaN buffer layers and the current-voltage characteristics of GaN p-i-n vertical conducting diodes on n-type 4H-SiC substrates grown by low-pressure metalorganic vapor-phase epitaxy. High Si doping of the AlGaN buffer layer at the AlGaN/SiC interface produces ohmic current-voltage characteristics in spite of the large band offset between AlGaN and 4H-SiC. Owing to the optimization of the AlGaN buffer layer, a low on-resistance (Ron) of 1.12 mΩ cm2 with high breakdown voltage (VB) of 300 V is obtained for a GaN p-i-n vertical conducting diode on a 4H-SiC substrate, leading to the figure of merit (V B2/Ron) of 80 MW/cm2, which is larger than that for the diode with the same structure on a 6H-SiC substrate (62 MW/cm2). This result indicates that 4H-SiC is preferable for fabricating GaN-based electronic devices with a low on-resistance and high breakdown voltage.

AB - We investigated the resistance of conductive AlGaN buffer layers and the current-voltage characteristics of GaN p-i-n vertical conducting diodes on n-type 4H-SiC substrates grown by low-pressure metalorganic vapor-phase epitaxy. High Si doping of the AlGaN buffer layer at the AlGaN/SiC interface produces ohmic current-voltage characteristics in spite of the large band offset between AlGaN and 4H-SiC. Owing to the optimization of the AlGaN buffer layer, a low on-resistance (Ron) of 1.12 mΩ cm2 with high breakdown voltage (VB) of 300 V is obtained for a GaN p-i-n vertical conducting diode on a 4H-SiC substrate, leading to the figure of merit (V B2/Ron) of 80 MW/cm2, which is larger than that for the diode with the same structure on a 6H-SiC substrate (62 MW/cm2). This result indicates that 4H-SiC is preferable for fabricating GaN-based electronic devices with a low on-resistance and high breakdown voltage.

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