Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide

Hidetaka Nishi, Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An InP-based photonic-crystal laser is integrated with a Si waveguide by using direct bonding and buried regrowth technologies on an SOI substrate. The fabricated device exhibits a threshold current of 24 pA and a 7.3-fJ/bit energy cost in direct modulation of a 10-Gbit/s NRZ signal.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages77-78
Number of pages2
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 2018 Oct 30
Externally publishedYes
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: 2018 Sep 162018 Sep 19

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period18/9/1618/9/19

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Keywords

  • Direct bonding
  • Semiconductor laser
  • Silicon photonics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Nishi, H., Takeda, K., Fujii, T., Kuramochi, E., Shinya, A., Notomi, M., Tsuchizawa, T., Kakitsuka, T., & Matsuo, S. (2018). Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 77-78). [8516174] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516174