Low phase noise, InGaP/GaAs HBT VCO MMIC for millimeter-wave applications

Satoshi Kurachi, Toshihiko Yoshimasu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm × 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.

Original languageEnglish
Pages (from-to)678-682
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE88-C
Issue number4
DOIs
Publication statusPublished - 2005 Apr

Fingerprint

Variable frequency oscillators
Monolithic microwave integrated circuits
Heterojunction bipolar transistors
Phase noise
Millimeter waves
Varactors
Microstrip lines
Electric lines
Diodes
Tuning
gallium arsenide

Keywords

  • InGaP/GaAs HBT
  • Low phase noise
  • Millimeter-wave
  • VCO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Low phase noise, InGaP/GaAs HBT VCO MMIC for millimeter-wave applications. / Kurachi, Satoshi; Yoshimasu, Toshihiko.

In: IEICE Transactions on Electronics, Vol. E88-C, No. 4, 04.2005, p. 678-682.

Research output: Contribution to journalArticle

@article{4f8217531b25489bb335218506fcc899,
title = "Low phase noise, InGaP/GaAs HBT VCO MMIC for millimeter-wave applications",
abstract = "A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm × 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.",
keywords = "InGaP/GaAs HBT, Low phase noise, Millimeter-wave, VCO",
author = "Satoshi Kurachi and Toshihiko Yoshimasu",
year = "2005",
month = "4",
doi = "10.1093/ietele/e88-c.4.678",
language = "English",
volume = "E88-C",
pages = "678--682",
journal = "IEICE Transactions on Electronics",
issn = "0916-8524",
publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",
number = "4",

}

TY - JOUR

T1 - Low phase noise, InGaP/GaAs HBT VCO MMIC for millimeter-wave applications

AU - Kurachi, Satoshi

AU - Yoshimasu, Toshihiko

PY - 2005/4

Y1 - 2005/4

N2 - A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm × 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.

AB - A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm × 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.

KW - InGaP/GaAs HBT

KW - Low phase noise

KW - Millimeter-wave

KW - VCO

UR - http://www.scopus.com/inward/record.url?scp=33645569093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645569093&partnerID=8YFLogxK

U2 - 10.1093/ietele/e88-c.4.678

DO - 10.1093/ietele/e88-c.4.678

M3 - Article

VL - E88-C

SP - 678

EP - 682

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 4

ER -