Low-power ultra-wideband power detector IC in 130 nm CMOS technology

Xin Yang, Yorikatsu Uchida, Qing Liu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents a low operation voltage ultrawideband power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOS transistor differential pair with a resistive feedback. The power detector IC was designed and fabricated using TSMC 130 nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 40 GHz at an operation voltage of 0.6 to 1.2 V. The minimum detectable power is -16 dBm at 40 GHz with a dc power consumption of only 0.116 mW.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding
Pages52-55
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Nanjing
Duration: 2012 Sep 182012 Sep 20

Other

Other2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012
CityNanjing
Period12/9/1812/9/20

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ASJC Scopus subject areas

  • Computer Networks and Communications

Cite this

Yang, X., Uchida, Y., Liu, Q., & Yoshimasu, T. (2012). Low-power ultra-wideband power detector IC in 130 nm CMOS technology. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding (pp. 52-55). [6338206] https://doi.org/10.1109/IMWS2.2012.6338206