Low-pressure diamond nuclation and growth on cu substrate

Shin Ichi Ojika, Satoshi Yamashita, Kazuhiro Kataoka, Takefumi Ishikura, Akira Yamaguchi, Hiroshi Kawarada

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    Abstract

    We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.

    Original languageEnglish
    Pages (from-to)193-199
    Number of pages7
    JournalJapanese Journal of Applied Physics
    Volume32
    Issue number2 A
    DOIs
    Publication statusPublished - 1993

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    Keywords

    • Amorphous carbon
    • Copper
    • Crystal growth
    • CVD
    • Diamond
    • ECR plasma
    • Lowpressure
    • Nucl;ation

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Ojika, S. I., Yamashita, S., Kataoka, K., Ishikura, T., Yamaguchi, A., & Kawarada, H. (1993). Low-pressure diamond nuclation and growth on cu substrate. Japanese Journal of Applied Physics, 32(2 A), 193-199. https://doi.org/10.1143/JJAP.32.L200