Abstract
We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.
Original language | English |
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Pages (from-to) | 193-199 |
Number of pages | 7 |
Journal | Japanese journal of applied physics |
Volume | 32 |
Issue number | 2 A |
DOIs | |
Publication status | Published - 1993 Feb |
Externally published | Yes |
Keywords
- Amorphous carbon
- CVD
- Copper
- Crystal growth
- Diamond
- ECR plasma
- Lowpressure
- Nucl;ation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)