Low-pressure diamond nuclation and growth on cu substrate

Shin Ichi Ojika; Satoshi Yamashita; Kazuhiro Kataoka; Takefumi Ishikura; Akira Yamaguchi; Hiroshi Kawarada

doi:10.1143/JJAP.32.L200

Low-pressure diamond nuclation and growth on cu substrate

Shin Ichi Ojika, Satoshi Yamashita, Kazuhiro Kataoka, Takefumi Ishikura, Akira Yamaguchi, Hiroshi Kawarada

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.

Original language	English
Pages (from-to)	193-199
Number of pages	7
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.32.L200
Publication status	Published - 1993

Fingerprint

Keywords

Amorphous carbon
Copper
Crystal growth
CVD
Diamond
ECR plasma
Lowpressure
Nucl;ation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

Ojika, S. I., Yamashita, S., Kataoka, K., Ishikura, T., Yamaguchi, A., & Kawarada, H. (1993). Low-pressure diamond nuclation and growth on cu substrate. Japanese Journal of Applied Physics, 32(2 A), 193-199. https://doi.org/10.1143/JJAP.32.L200

@article{860e9ec15d624ee4b4397b41b39d064c,

title = "Low-pressure diamond nuclation and growth on cu substrate",

abstract = "We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in {\'a} CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucl{\'e}ation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.",

keywords = "Amorphous carbon, Copper, Crystal growth, CVD, Diamond, ECR plasma, Lowpressure, Nucl;ation",

author = "Ojika, {Shin Ichi} and Satoshi Yamashita and Kazuhiro Kataoka and Takefumi Ishikura and Akira Yamaguchi and Hiroshi Kawarada",

year = "1993",

doi = "10.1143/JJAP.32.L200",

language = "English",

volume = "32",

pages = "193--199",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2 A",

}

TY - JOUR

T1 - Low-pressure diamond nuclation and growth on cu substrate

AU - Ojika, Shin Ichi

AU - Yamashita, Satoshi

AU - Kataoka, Kazuhiro

AU - Ishikura, Takefumi

AU - Yamaguchi, Akira

AU - Kawarada, Hiroshi

PY - 1993

Y1 - 1993

N2 - We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.

AB - We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.

KW - Amorphous carbon

KW - Copper

KW - Crystal growth

KW - CVD

KW - Diamond

KW - ECR plasma

KW - Lowpressure

KW - Nucl;ation

UR - http://www.scopus.com/inward/record.url?scp=84956133541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956133541&partnerID=8YFLogxK

U2 - 10.1143/JJAP.32.L200

DO - 10.1143/JJAP.32.L200

M3 - Article

AN - SCOPUS:84956133541

VL - 32

SP - 193

EP - 199

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 A

ER -

Access to Document

10.1143/JJAP.32.L200