Abstract
We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.
| Original language | English |
|---|---|
| Pages (from-to) | 193-199 |
| Number of pages | 7 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 32 |
| Issue number | 2 A |
| DOIs | |
| Publication status | Published - 1993 |
Fingerprint
Keywords
- Amorphous carbon
- Copper
- Crystal growth
- CVD
- Diamond
- ECR plasma
- Lowpressure
- Nucl;ation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Low-pressure diamond nuclation and growth on cu substrate. / Ojika, Shin Ichi; Yamashita, Satoshi; Kataoka, Kazuhiro; Ishikura, Takefumi; Yamaguchi, Akira; Kawarada, Hiroshi.
In: Japanese Journal of Applied Physics, Vol. 32, No. 2 A, 1993, p. 193-199.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-pressure diamond nuclation and growth on cu substrate
AU - Ojika, Shin Ichi
AU - Yamashita, Satoshi
AU - Kataoka, Kazuhiro
AU - Ishikura, Takefumi
AU - Yamaguchi, Akira
AU - Kawarada, Hiroshi
PY - 1993
Y1 - 1993
N2 - We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.
AB - We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.
KW - Amorphous carbon
KW - Copper
KW - Crystal growth
KW - CVD
KW - Diamond
KW - ECR plasma
KW - Lowpressure
KW - Nucl;ation
UR - http://www.scopus.com/inward/record.url?scp=84956133541&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84956133541&partnerID=8YFLogxK
U2 - 10.1143/JJAP.32.L200
DO - 10.1143/JJAP.32.L200
M3 - Article
AN - SCOPUS:84956133541
VL - 32
SP - 193
EP - 199
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2 A
ER -