Abstract
We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.
| Original language | English |
|---|---|
| Pages (from-to) | 193-199 |
| Number of pages | 7 |
| Journal | Japanese journal of applied physics |
| Volume | 32 |
| Issue number | 2 A |
| DOIs | |
| Publication status | Published - 1993 Feb |
| Externally published | Yes |
Keywords
- Amorphous carbon
- CVD
- Copper
- Crystal growth
- Diamond
- ECR plasma
- Lowpressure
- Nucl;ation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Ojika, S. I., Yamashita, S., Kataoka, K., Ishikura, T., Yamaguchi, A., & Kawarada, H. (1993). Low-pressure diamond nuclation and growth on cu substrate. Japanese journal of applied physics, 32(2 A), 193-199. https://doi.org/10.1143/JJAP.32.L200