Low-pressure diamond nuclation and growth on cu substrate

Shin ichi Ojika*, Satoshi Yamashita, Kazuhiro Kataoka, Takefumi Ishikura, Akira Yamaguchi, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.

Original languageEnglish
Pages (from-to)193-199
Number of pages7
JournalJapanese journal of applied physics
Issue number2 A
Publication statusPublished - 1993 Feb
Externally publishedYes


  • Amorphous carbon
  • CVD
  • Copper
  • Crystal growth
  • Diamond
  • ECR plasma
  • Lowpressure
  • Nucl;ation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Low-pressure diamond nuclation and growth on cu substrate'. Together they form a unique fingerprint.

Cite this