Low-pressure diamond nucleation and growth on Cu substrate

Shin ichi Ojika, Satoshi Yamashita, Kazuhiro Kataoka, Takefumi Ishikura, Akira Yamaguchi, Hiroshi Kawarada

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Abstract

We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume32
Issue number2 A
Publication statusPublished - 1993 Feb 1
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ojika, S. I., Yamashita, S., Kataoka, K., Ishikura, T., Yamaguchi, A., & Kawarada, H. (1993). Low-pressure diamond nucleation and growth on Cu substrate. Japanese Journal of Applied Physics, Part 2: Letters, 32(2 A).