Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

K. Kumakura, Toshiki Makimoto, N. Kobayashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.

Original languageEnglish
Pages (from-to)363-366
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number1
DOIs
Publication statusPublished - 2001 Nov
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
Contact resistance
contact resistance
electric contacts
Hole concentration
Polarization
polarization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer. / Kumakura, K.; Makimoto, Toshiki; Kobayashi, N.

In: Physica Status Solidi (A) Applied Research, Vol. 188, No. 1, 11.2001, p. 363-366.

Research output: Contribution to journalArticle

@article{ac42d748cae947b49e9bad65a2cc50ce,
title = "Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer",
abstract = "We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.",
author = "K. Kumakura and Toshiki Makimoto and N. Kobayashi",
year = "2001",
month = "11",
doi = "10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L",
language = "English",
volume = "188",
pages = "363--366",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

AU - Kumakura, K.

AU - Makimoto, Toshiki

AU - Kobayashi, N.

PY - 2001/11

Y1 - 2001/11

N2 - We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.

AB - We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.

UR - http://www.scopus.com/inward/record.url?scp=0037815393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037815393&partnerID=8YFLogxK

U2 - 10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L

DO - 10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L

M3 - Article

VL - 188

SP - 363

EP - 366

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -