Abstract
We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.
| Original language | English |
|---|---|
| Pages (from-to) | 363-366 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 188 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 Nov |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer. / Kumakura, K.; Makimoto, Toshiki; Kobayashi, N.
In: Physica Status Solidi (A) Applied Research, Vol. 188, No. 1, 11.2001, p. 363-366.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer
AU - Kumakura, K.
AU - Makimoto, Toshiki
AU - Kobayashi, N.
PY - 2001/11
Y1 - 2001/11
N2 - We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.
AB - We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.
UR - http://www.scopus.com/inward/record.url?scp=0037815393&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037815393&partnerID=8YFLogxK
U2 - 10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L
DO - 10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L
M3 - Article
AN - SCOPUS:0037815393
VL - 188
SP - 363
EP - 366
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -