Abstract
We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.
| Original language | English |
|---|---|
| Pages (from-to) | 363-366 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 188 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 Nov 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Cite this
Kumakura, K., Makimoto, T., & Kobayashi, N. (2001). Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer. Physica Status Solidi (A) Applied Research, 188(1), 363-366. https://doi.org/10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L