Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

K. Kumakura; T. Makimoto; N. Kobayashi

doi:10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L

Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

K. Kumakura^*, T. Makimoto, N. Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10^-6 Ω cm² was obtained using a contact layer of 2 nm thick strained In_0.19Ga_0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.

Original language	English
Pages (from-to)	363-366
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L
Publication status	Published - 2001 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L

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title = "Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer",

abstract = "We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.",

author = "K. Kumakura and T. Makimoto and N. Kobayashi",

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T1 - Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

AU - Kumakura, K.

AU - Makimoto, T.

AU - Kobayashi, N.

PY - 2001/11

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N2 - We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.

AB - We investigated non-alloy Ohmic contact to p-type GaN using Mg-doped InGaN contact layer. The thickness and In mole fraction of the p-type InGaN were varied from 2 to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN contact layers are effective in reducing the contact resistance. The lowest specific contact resistance of 1.1 × 10-6 Ω cm2 was obtained using a contact layer of 2 nm thick strained In0.19Ga0.81N. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to the large polarization-induced band bending at the surface as well as the high hole concentration in p-type InGaN.

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Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

Abstract

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