Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Kazuhide Kumakura; Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.1410336

Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Kazuhide Kumakura^*, Toshiki Makimoto, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In_0.19Ga_0.81N showed the lowest specific contact resistance of 1.1 × 10^-6 Ω cm². The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN.

Original language	English
Pages (from-to)	2588-2590
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	16
DOIs	https://doi.org/10.1063/1.1410336
Publication status	Published - 2001 Oct 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1410336

Cite this

@article{fae2a8ebab414ca1b1af903e1f86b6e5,

title = "Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer",

abstract = "A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1 × 10-6 Ω cm2. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN.",

author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",

year = "2001",

month = oct,

day = "15",

doi = "10.1063/1.1410336",

language = "English",

volume = "79",

pages = "2588--2590",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2001/10/15

Y1 - 2001/10/15

N2 - A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1 × 10-6 Ω cm2. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN.

AB - A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1 × 10-6 Ω cm2. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN.

UR - http://www.scopus.com/inward/record.url?scp=0035886085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035886085&partnerID=8YFLogxK

U2 - 10.1063/1.1410336

DO - 10.1063/1.1410336

M3 - Article

AN - SCOPUS:0035886085

SN - 0003-6951

VL - 79

SP - 2588

EP - 2590

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this