Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)

Abstract

A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1 × 10-6 Ω cm2. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN.

Original languageEnglish
Pages (from-to)2588-2590
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number16
DOIs
Publication statusPublished - 2001 Oct 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer'. Together they form a unique fingerprint.

Cite this