Low-resistance tunnel magnetoresistive head

K. Ohashi*, K. Hayashi, K. Nagahara, K. Ishihara, E. Fukami, J. Fujikata, S. Mori, M. Nakada, T. Mitsuzuka, K. Matsuda, H. Mori, A. Kamijo, H. Tsuge

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

30 Citations (Scopus)


A tunnel magnetoresistive (TMR) head with a low resistance of about 30 Ω and effective track width of 1.4 μm was fabricated using an in situ natural oxidation (ISNO) technique. Its read-output was almost the same as that expected from test elements at the wafer level. We found no large difference in noise voltages between TMR head and GMR head when their resistance was about 30 Ω. A very low-resistivity TMR element with a resistance-area product of 14 Ω · μm2 and a fairly high ΔR/R of 14% was also developed using ISNO. A signal-to-noise ratio consideration suggests that such low resistance is a key to TMR heads for high recording densities.

Original languageEnglish
Pages (from-to)2549-2553
Number of pages5
JournalIEEE Transactions on Magnetics
Issue number5 I
Publication statusPublished - 2000 Sept
Externally publishedYes
Event2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada
Duration: 2000 Apr 92000 Apr 12


  • In situ natural oxidation
  • Signal-to-noise ratio
  • Spin-dependent tunneling
  • TMR head

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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