Low-resistance tunnel magnetoresistive head

K. Ohashi; K. Hayashi; K. Nagahara; K. Ishihara; E. Fukami; J. Fujikata; S. Mori; M. Nakada; T. Mitsuzuka; K. Matsuda; H. Mori; A. Kamijo; H. Tsuge

doi:10.1109/20.908506

Low-resistance tunnel magnetoresistive head

K. Ohashi^*, K. Hayashi, K. Nagahara, K. Ishihara, E. Fukami, J. Fujikata, S. Mori, M. Nakada, T. Mitsuzuka, K. Matsuda, H. Mori, A. Kamijo, H. Tsuge

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

30 Citations (Scopus)

Abstract

A tunnel magnetoresistive (TMR) head with a low resistance of about 30 Ω and effective track width of 1.4 μm was fabricated using an in situ natural oxidation (ISNO) technique. Its read-output was almost the same as that expected from test elements at the wafer level. We found no large difference in noise voltages between TMR head and GMR head when their resistance was about 30 Ω. A very low-resistivity TMR element with a resistance-area product of 14 Ω · μm² and a fairly high ΔR/R of 14% was also developed using ISNO. A signal-to-noise ratio consideration suggests that such low resistance is a key to TMR heads for high recording densities.

Original language	English
Pages (from-to)	2549-2553
Number of pages	5
Journal	IEEE Transactions on Magnetics
Volume	36
Issue number	5 I
DOIs	https://doi.org/10.1109/20.908506
Publication status	Published - 2000 Sept
Externally published	Yes
Event	2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada Duration: 2000 Apr 9 → 2000 Apr 12

Keywords

In situ natural oxidation
Signal-to-noise ratio
Spin-dependent tunneling
TMR head

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.908506

Cite this

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title = "Low-resistance tunnel magnetoresistive head",

abstract = "A tunnel magnetoresistive (TMR) head with a low resistance of about 30 Ω and effective track width of 1.4 μm was fabricated using an in situ natural oxidation (ISNO) technique. Its read-output was almost the same as that expected from test elements at the wafer level. We found no large difference in noise voltages between TMR head and GMR head when their resistance was about 30 Ω. A very low-resistivity TMR element with a resistance-area product of 14 Ω · μm2 and a fairly high ΔR/R of 14% was also developed using ISNO. A signal-to-noise ratio consideration suggests that such low resistance is a key to TMR heads for high recording densities.",

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author = "K. Ohashi and K. Hayashi and K. Nagahara and K. Ishihara and E. Fukami and J. Fujikata and S. Mori and M. Nakada and T. Mitsuzuka and K. Matsuda and H. Mori and A. Kamijo and H. Tsuge",

note = "Funding Information: Manuscript received March 2, 2000. This work was supported in part by the management of the Association of Super-Advanced Electronics Technologies (ASET) in the Ministry of International Trade and Industry (MITI) Program supported by the New Energy and Industrial Technology Development Organization (NEDO). The authors are with NEC Corporation, Fuchu, Tokyo, 183-8501 Japan. Publisher Item Identifier S 0018-9464(00)08948-2.; 2000 International Magnetics Conference (INTERMAG 2000) ; Conference date: 09-04-2000 Through 12-04-2000",

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TY - JOUR

T1 - Low-resistance tunnel magnetoresistive head

AU - Ohashi, K.

AU - Hayashi, K.

AU - Nagahara, K.

AU - Ishihara, K.

AU - Fukami, E.

AU - Fujikata, J.

AU - Mori, S.

AU - Nakada, M.

AU - Mitsuzuka, T.

AU - Matsuda, K.

AU - Mori, H.

AU - Kamijo, A.

AU - Tsuge, H.

N1 - Funding Information: Manuscript received March 2, 2000. This work was supported in part by the management of the Association of Super-Advanced Electronics Technologies (ASET) in the Ministry of International Trade and Industry (MITI) Program supported by the New Energy and Industrial Technology Development Organization (NEDO). The authors are with NEC Corporation, Fuchu, Tokyo, 183-8501 Japan. Publisher Item Identifier S 0018-9464(00)08948-2.

PY - 2000/9

Y1 - 2000/9

N2 - A tunnel magnetoresistive (TMR) head with a low resistance of about 30 Ω and effective track width of 1.4 μm was fabricated using an in situ natural oxidation (ISNO) technique. Its read-output was almost the same as that expected from test elements at the wafer level. We found no large difference in noise voltages between TMR head and GMR head when their resistance was about 30 Ω. A very low-resistivity TMR element with a resistance-area product of 14 Ω · μm2 and a fairly high ΔR/R of 14% was also developed using ISNO. A signal-to-noise ratio consideration suggests that such low resistance is a key to TMR heads for high recording densities.

AB - A tunnel magnetoresistive (TMR) head with a low resistance of about 30 Ω and effective track width of 1.4 μm was fabricated using an in situ natural oxidation (ISNO) technique. Its read-output was almost the same as that expected from test elements at the wafer level. We found no large difference in noise voltages between TMR head and GMR head when their resistance was about 30 Ω. A very low-resistivity TMR element with a resistance-area product of 14 Ω · μm2 and a fairly high ΔR/R of 14% was also developed using ISNO. A signal-to-noise ratio consideration suggests that such low resistance is a key to TMR heads for high recording densities.

KW - In situ natural oxidation

KW - Signal-to-noise ratio

KW - Spin-dependent tunneling

KW - TMR head

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 I

T2 - 2000 International Magnetics Conference (INTERMAG 2000)

Y2 - 9 April 2000 through 12 April 2000

ER -

Low-resistance tunnel magnetoresistive head

Abstract

Keywords

ASJC Scopus subject areas

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