Low-resistance tunnel magnetoresistive head

Keishi Ohashi, K. Hayashi, K. Nagahara, K. Ishihara, E. Fukami, J. Fujikata, S. Mori, M. Nakada, T. Mitsuzuka, K. Matsuda, H. Mori, A. Kamijo, H. Tsuge

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Abstract

A tunnel magnetoresistive (TMR) head with a low resistance of about 30 Ω and effective track width of 1.4 μm was fabricated using an in situ natural oxidation (ISNO) technique. Its read-output was almost the same as that expected from test elements at the wafer level. We found no large difference in noise voltages between TMR head and GMR head when their resistance was about 30 Ω. A very low-resistivity TMR element with a resistance-area product of 14 Ω · μm 2 and a fairly high ΔR/R of 14% was also developed using ISNO. A signal-to-noise ratio consideration suggests that such low resistance is a key to TMR heads for high recording densities.

Original languageEnglish
Pages (from-to)2549-2553
Number of pages5
JournalIEEE Transactions on Magnetics
Volume36
Issue number5 I
DOIs
Publication statusPublished - 2000 Sep
Externally publishedYes

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Keywords

  • In situ natural oxidation
  • Signal-to-noise ratio
  • Spin-dependent tunneling
  • TMR head

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Ohashi, K., Hayashi, K., Nagahara, K., Ishihara, K., Fukami, E., Fujikata, J., Mori, S., Nakada, M., Mitsuzuka, T., Matsuda, K., Mori, H., Kamijo, A., & Tsuge, H. (2000). Low-resistance tunnel magnetoresistive head. IEEE Transactions on Magnetics, 36(5 I), 2549-2553. https://doi.org/10.1109/20.908506