Low temperature Au-Au flip chip bonding with VUV/O 3 treatment for 3D integration

Akiko Okada, Masatsugu Nimura, Naoko Unami, Akitsu Shigetou, Hirokazu Noma, Katsuyuki Sakuma, Shuichi Shoji, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants without damages. The Au-Au bonding with VUV/O 3 treatment was achieved at 200 °C. The average shear strength was about 80 MPa per unit area. Therefore, it was proved that VUV/O 3 treatment is effective in Au-Au bonding.

Original languageEnglish
Title of host publicationProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Number of pages1
DOIs
Publication statusPublished - 2012 Aug 15
Event2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
Duration: 2012 May 222012 May 23

Publication series

NameProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Other

Other2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
CountryJapan
CityTokyo
Period12/5/2212/5/23

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Vision and Pattern Recognition

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  • Cite this

    Okada, A., Nimura, M., Unami, N., Shigetou, A., Noma, H., Sakuma, K., Shoji, S., & Mizuno, J. (2012). Low temperature Au-Au flip chip bonding with VUV/O 3 treatment for 3D integration. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238082] (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). https://doi.org/10.1109/LTB-3D.2012.6238082