Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100°C without generating cracks has been demonstrated.

Original languageEnglish
Pages (from-to)145-146
Number of pages2
JournalIEICE Transactions on Electronics
VolumeE90-C
Issue number1
DOIs
Publication statusPublished - 2007 Jan
Externally publishedYes

Fingerprint

Silicon
Air
Argon
Gold
Temperature
Lithium
Impurities
Cracks
Plasmas
Thin films
Substrates
lithium niobate

Keywords

  • Au-to-Au bonding
  • Hybrid integration
  • Lithium niobate/silicon structure
  • Low-temperature bonding
  • Surface-activated bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air. / Takigawa, Ryo; Higurashi, Eiji; Suga, Tadatomo; Shinada, Satoshi; Kawanishi, Tetsuya.

In: IEICE Transactions on Electronics, Vol. E90-C, No. 1, 01.2007, p. 145-146.

Research output: Contribution to journalArticle

Takigawa, Ryo ; Higurashi, Eiji ; Suga, Tadatomo ; Shinada, Satoshi ; Kawanishi, Tetsuya. / Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air. In: IEICE Transactions on Electronics. 2007 ; Vol. E90-C, No. 1. pp. 145-146.
@article{f71797315e9040be860122d93613da61,
title = "Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air",
abstract = "A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100°C without generating cracks has been demonstrated.",
keywords = "Au-to-Au bonding, Hybrid integration, Lithium niobate/silicon structure, Low-temperature bonding, Surface-activated bonding",
author = "Ryo Takigawa and Eiji Higurashi and Tadatomo Suga and Satoshi Shinada and Tetsuya Kawanishi",
year = "2007",
month = "1",
doi = "10.1093/ietele/e90-c.1.145",
language = "English",
volume = "E90-C",
pages = "145--146",
journal = "IEICE Transactions on Electronics",
issn = "0916-8524",
publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",
number = "1",

}

TY - JOUR

T1 - Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air

AU - Takigawa, Ryo

AU - Higurashi, Eiji

AU - Suga, Tadatomo

AU - Shinada, Satoshi

AU - Kawanishi, Tetsuya

PY - 2007/1

Y1 - 2007/1

N2 - A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100°C without generating cracks has been demonstrated.

AB - A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100°C without generating cracks has been demonstrated.

KW - Au-to-Au bonding

KW - Hybrid integration

KW - Lithium niobate/silicon structure

KW - Low-temperature bonding

KW - Surface-activated bonding

UR - http://www.scopus.com/inward/record.url?scp=33846460865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846460865&partnerID=8YFLogxK

U2 - 10.1093/ietele/e90-c.1.145

DO - 10.1093/ietele/e90-c.1.145

M3 - Article

AN - SCOPUS:33846460865

VL - E90-C

SP - 145

EP - 146

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 1

ER -