Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes the low-temperature bonding of a lithium niobate (LiNbO3) waveguide chip to a silicon (Si) substrate for integrated optical systems. The bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au thin films (thickness: 100 nm) of the LiNbO3 chip and the Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. The bonded chips fractured at bonding temperature higher than 150°C because of the coefficient of thermal expansion (CTE) mismatch. The LiNbO3 chips were successfully bonded to the Si substrates at relatively low temperature (100°C). The die-shear strength of the LiNbO3 chip was estimated to be more than 12 kg (3.8 MPa), the upper limit of our shear testing equipment.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsY. Katagiri
Volume6050
DOIs
Publication statusPublished - 2005
Externally publishedYes
EventOptomechatronic Micro/Nano Devices and Components - Sappora, Japan
Duration: 2005 Dec 52005 Dec 7

Other

OtherOptomechatronic Micro/Nano Devices and Components
CountryJapan
CitySappora
Period05/12/505/12/7

Fingerprint

Waveguides
chips
waveguides
Silicon
air
silicon
Substrates
Air
Temperature
Plasmas
Equipment testing
static pressure
Optical systems
Shear strength
Contacts (fluid mechanics)
shear strength
Thermal expansion
Film thickness
lithium niobates
Lithium

Keywords

  • Integrated optics
  • LiNbO waveguide
  • Surface activated bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Takigawa, R., Higurashi, E., Suga, T., Shinada, S., & Kawanishi, T. (2005). Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air. In Y. Katagiri (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6050). [605012] https://doi.org/10.1117/12.653072

Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air. / Takigawa, Ryo; Higurashi, Eiji; Suga, Tadatomo; Shinada, Satoshi; Kawanishi, Tetsuya.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Y. Katagiri. Vol. 6050 2005. 605012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takigawa, R, Higurashi, E, Suga, T, Shinada, S & Kawanishi, T 2005, Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air. in Y Katagiri (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 6050, 605012, Optomechatronic Micro/Nano Devices and Components, Sappora, Japan, 05/12/5. https://doi.org/10.1117/12.653072
Takigawa R, Higurashi E, Suga T, Shinada S, Kawanishi T. Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air. In Katagiri Y, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6050. 2005. 605012 https://doi.org/10.1117/12.653072
Takigawa, Ryo ; Higurashi, Eiji ; Suga, Tadatomo ; Shinada, Satoshi ; Kawanishi, Tetsuya. / Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air. Proceedings of SPIE - The International Society for Optical Engineering. editor / Y. Katagiri. Vol. 6050 2005.
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