Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging

Shin Ito, Jun Mizuno, Hiroyuki Ishida, Toshinori Ogashiwa, Yukio Kanehira, Hiroshi Murai, Fumihiro Wakai, Shuichi Shoji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, low temperature bonding using sub-micron Au particles was investigated. Two types of Au particles with different average mean diameter of 0.1 μm and 0.3 μm were used. The 0.1 μm Au particles were sintered at lower temperature than that of 0.3 μm. These particles have an advantage of low sintering temperature under 200°C, and compensating surface roughness. The compression deformation properties of Au particles were measured. They were compressed to around 3 and 5 μm at 30 and 100 MPa applied pressure, respectively. Chip-level bonding was performed with sealing rings of Au particles. The tensile strength of 55.2 MPa was obtained by bonding under applied pressure of 50 MPa at 100°C. As the evaluation of hermeticity, gross leak test was performed for bonded chips with single, double, and triple sealing rings.

Original languageEnglish
Title of host publication2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan
Duration: 2012 Dec 102012 Dec 12

Publication series

Name2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

Conference

Conference2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
CountryJapan
CityKyoto
Period12/12/1012/12/12

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Ito, S., Mizuno, J., Ishida, H., Ogashiwa, T., Kanehira, Y., Murai, H., Wakai, F., & Shoji, S. (2012). Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging. In 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 [6523451] (2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012). https://doi.org/10.1109/ICSJ.2012.6523451