Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition

Kosuke Yamada; Hiroyuki Kuwae; Takumi Kamibayashi; Wataru Momose; Shuichi Shoji; Jun Mizuno

doi:10.1109/IMPACT.2018.8625756

Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition

Kosuke Yamada^*, Hiroyuki Kuwae, Takumi Kamibayashi, Wataru Momose, Shuichi Shoji, Jun Mizuno

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We propose a low temperature bonding technique using an ultrathin intermediate layer deposited by atomic layer deposition. The ultrathin Pt film is selectively deposited on Cu surfaces without any masks. In order to reduce a deterioration of a reliability caused by impurities in the bonding interface, quasi-direct bonding was realized by thinning Pt intermediate layer. The shear strength of Cu-Cu bonding with the Pt intermediate layer achieved 9.5 MPa, which was five times higher than that without the Pt intermediate layer. We expect that the proposed bonding technique has a high potential to low temperature packaging technologies.

Original language	English
Title of host publication	13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018
Publisher	IEEE Computer Society
Pages	123-126
Number of pages	4
ISBN (Electronic)	9781538656150
DOIs	https://doi.org/10.1109/IMPACT.2018.8625756
Publication status	Published - 2019 Jan 24
Event	13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018 - Taipei, Taiwan, Province of China Duration: 2018 Oct 24 → 2018 Oct 26

Publication series

Name	Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
Volume	2018-October
ISSN (Print)	2150-5934
ISSN (Electronic)	2150-5942

Conference

Conference	13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018
Country/Territory	Taiwan, Province of China
City	Taipei
Period	18/10/24 → 18/10/26

ASJC Scopus subject areas

Hardware and Architecture
Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/IMPACT.2018.8625756

Cite this

Yamada, K., Kuwae, H., Kamibayashi, T., Momose, W., Shoji, S., & Mizuno, J. (2019). Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. In 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018 (pp. 123-126). [8625756] (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT; Vol. 2018-October). IEEE Computer Society. https://doi.org/10.1109/IMPACT.2018.8625756

Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. / Yamada, Kosuke; Kuwae, Hiroyuki; Kamibayashi, Takumi; Momose, Wataru; Shoji, Shuichi ; Mizuno, Jun.

13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018. IEEE Computer Society, 2019. p. 123-126 8625756 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT; Vol. 2018-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamada, K, Kuwae, H, Kamibayashi, T, Momose, W, Shoji, S & Mizuno, J 2019, Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. in 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018., 8625756, Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT, vol. 2018-October, IEEE Computer Society, pp. 123-126, 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018, Taipei, Taiwan, Province of China, 18/10/24. https://doi.org/10.1109/IMPACT.2018.8625756

Yamada K, Kuwae H, Kamibayashi T, Momose W, Shoji S , Mizuno J. Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. In 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018. IEEE Computer Society. 2019. p. 123-126. 8625756. (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). https://doi.org/10.1109/IMPACT.2018.8625756

Yamada, Kosuke ; Kuwae, Hiroyuki ; Kamibayashi, Takumi ; Momose, Wataru ; Shoji, Shuichi ; Mizuno, Jun. / Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018. IEEE Computer Society, 2019. pp. 123-126 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).

@inproceedings{1eb57b36756849d09453b26b86926b2d,

title = "Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition",

abstract = "We propose a low temperature bonding technique using an ultrathin intermediate layer deposited by atomic layer deposition. The ultrathin Pt film is selectively deposited on Cu surfaces without any masks. In order to reduce a deterioration of a reliability caused by impurities in the bonding interface, quasi-direct bonding was realized by thinning Pt intermediate layer. The shear strength of Cu-Cu bonding with the Pt intermediate layer achieved 9.5 MPa, which was five times higher than that without the Pt intermediate layer. We expect that the proposed bonding technique has a high potential to low temperature packaging technologies.",

author = "Kosuke Yamada and Hiroyuki Kuwae and Takumi Kamibayashi and Wataru Momose and Shuichi Shoji and Jun Mizuno",

note = "Funding Information: This work is partly supported by Japan Ministry of Education, Culture, Sport Science & Technology (MEXT) Grant-in-Aid for Scientific Basic Research (A) No. 16H02349 and Young Scientists No. 18K13770. The authors thank for MEXT Nanotechnology Platform Support Project of Waseda University. Publisher Copyright: {\textcopyright} 2018 IEEE.; 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018 ; Conference date: 24-10-2018 Through 26-10-2018",

year = "2019",

month = jan,

day = "24",

doi = "10.1109/IMPACT.2018.8625756",

language = "English",

series = "Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT",

publisher = "IEEE Computer Society",

pages = "123--126",

booktitle = "13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018",

}

TY - GEN

T1 - Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition

AU - Yamada, Kosuke

AU - Kuwae, Hiroyuki

AU - Kamibayashi, Takumi

AU - Momose, Wataru

AU - Shoji, Shuichi

AU - Mizuno, Jun

N1 - Funding Information: This work is partly supported by Japan Ministry of Education, Culture, Sport Science & Technology (MEXT) Grant-in-Aid for Scientific Basic Research (A) No. 16H02349 and Young Scientists No. 18K13770. The authors thank for MEXT Nanotechnology Platform Support Project of Waseda University. Publisher Copyright: © 2018 IEEE.

PY - 2019/1/24

Y1 - 2019/1/24

N2 - We propose a low temperature bonding technique using an ultrathin intermediate layer deposited by atomic layer deposition. The ultrathin Pt film is selectively deposited on Cu surfaces without any masks. In order to reduce a deterioration of a reliability caused by impurities in the bonding interface, quasi-direct bonding was realized by thinning Pt intermediate layer. The shear strength of Cu-Cu bonding with the Pt intermediate layer achieved 9.5 MPa, which was five times higher than that without the Pt intermediate layer. We expect that the proposed bonding technique has a high potential to low temperature packaging technologies.

AB - We propose a low temperature bonding technique using an ultrathin intermediate layer deposited by atomic layer deposition. The ultrathin Pt film is selectively deposited on Cu surfaces without any masks. In order to reduce a deterioration of a reliability caused by impurities in the bonding interface, quasi-direct bonding was realized by thinning Pt intermediate layer. The shear strength of Cu-Cu bonding with the Pt intermediate layer achieved 9.5 MPa, which was five times higher than that without the Pt intermediate layer. We expect that the proposed bonding technique has a high potential to low temperature packaging technologies.

UR - http://www.scopus.com/inward/record.url?scp=85062452713&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062452713&partnerID=8YFLogxK

U2 - 10.1109/IMPACT.2018.8625756

DO - 10.1109/IMPACT.2018.8625756

M3 - Conference contribution

AN - SCOPUS:85062452713

T3 - Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT

SP - 123

EP - 126

BT - 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018

PB - IEEE Computer Society

T2 - 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018

Y2 - 24 October 2018 through 26 October 2018

ER -

Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition

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