Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition

Kosuke Yamada, Hiroyuki Kuwae, Takumi Kamibayashi, Wataru Momose, Shuichi Shoji, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We propose a low temperature bonding technique using an ultrathin intermediate layer deposited by atomic layer deposition. The ultrathin Pt film is selectively deposited on Cu surfaces without any masks. In order to reduce a deterioration of a reliability caused by impurities in the bonding interface, quasi-direct bonding was realized by thinning Pt intermediate layer. The shear strength of Cu-Cu bonding with the Pt intermediate layer achieved 9.5 MPa, which was five times higher than that without the Pt intermediate layer. We expect that the proposed bonding technique has a high potential to low temperature packaging technologies.

Original languageEnglish
Title of host publication13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018
PublisherIEEE Computer Society
Pages123-126
Number of pages4
ISBN (Electronic)9781538656150
DOIs
Publication statusPublished - 2019 Jan 24
Event13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018 - Taipei, Taiwan, Province of China
Duration: 2018 Oct 242018 Oct 26

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
Volume2018-October
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Conference

Conference13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018
CountryTaiwan, Province of China
CityTaipei
Period18/10/2418/10/26

Fingerprint

Atomic layer deposition
Platinum
Copper
Temperature
Ultrathin films
Shear strength
Deterioration
Masks
Packaging
Impurities

ASJC Scopus subject areas

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Yamada, K., Kuwae, H., Kamibayashi, T., Momose, W., Shoji, S., & Mizuno, J. (2019). Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. In 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018 (pp. 123-126). [8625756] (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT; Vol. 2018-October). IEEE Computer Society. https://doi.org/10.1109/IMPACT.2018.8625756

Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. / Yamada, Kosuke; Kuwae, Hiroyuki; Kamibayashi, Takumi; Momose, Wataru; Shoji, Shuichi; Mizuno, Jun.

13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018. IEEE Computer Society, 2019. p. 123-126 8625756 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT; Vol. 2018-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamada, K, Kuwae, H, Kamibayashi, T, Momose, W, Shoji, S & Mizuno, J 2019, Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. in 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018., 8625756, Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT, vol. 2018-October, IEEE Computer Society, pp. 123-126, 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018, Taipei, Taiwan, Province of China, 18/10/24. https://doi.org/10.1109/IMPACT.2018.8625756
Yamada K, Kuwae H, Kamibayashi T, Momose W, Shoji S, Mizuno J. Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. In 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018. IEEE Computer Society. 2019. p. 123-126. 8625756. (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). https://doi.org/10.1109/IMPACT.2018.8625756
Yamada, Kosuke ; Kuwae, Hiroyuki ; Kamibayashi, Takumi ; Momose, Wataru ; Shoji, Shuichi ; Mizuno, Jun. / Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition. 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018. IEEE Computer Society, 2019. pp. 123-126 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).
@inproceedings{1eb57b36756849d09453b26b86926b2d,
title = "Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition",
abstract = "We propose a low temperature bonding technique using an ultrathin intermediate layer deposited by atomic layer deposition. The ultrathin Pt film is selectively deposited on Cu surfaces without any masks. In order to reduce a deterioration of a reliability caused by impurities in the bonding interface, quasi-direct bonding was realized by thinning Pt intermediate layer. The shear strength of Cu-Cu bonding with the Pt intermediate layer achieved 9.5 MPa, which was five times higher than that without the Pt intermediate layer. We expect that the proposed bonding technique has a high potential to low temperature packaging technologies.",
author = "Kosuke Yamada and Hiroyuki Kuwae and Takumi Kamibayashi and Wataru Momose and Shuichi Shoji and Jun Mizuno",
year = "2019",
month = "1",
day = "24",
doi = "10.1109/IMPACT.2018.8625756",
language = "English",
series = "Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT",
publisher = "IEEE Computer Society",
pages = "123--126",
booktitle = "13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018",

}

TY - GEN

T1 - Low temperature copper-copper quasi-direct bonding with ultrathin platinum intermediate layer using atomic layer deposition

AU - Yamada, Kosuke

AU - Kuwae, Hiroyuki

AU - Kamibayashi, Takumi

AU - Momose, Wataru

AU - Shoji, Shuichi

AU - Mizuno, Jun

PY - 2019/1/24

Y1 - 2019/1/24

N2 - We propose a low temperature bonding technique using an ultrathin intermediate layer deposited by atomic layer deposition. The ultrathin Pt film is selectively deposited on Cu surfaces without any masks. In order to reduce a deterioration of a reliability caused by impurities in the bonding interface, quasi-direct bonding was realized by thinning Pt intermediate layer. The shear strength of Cu-Cu bonding with the Pt intermediate layer achieved 9.5 MPa, which was five times higher than that without the Pt intermediate layer. We expect that the proposed bonding technique has a high potential to low temperature packaging technologies.

AB - We propose a low temperature bonding technique using an ultrathin intermediate layer deposited by atomic layer deposition. The ultrathin Pt film is selectively deposited on Cu surfaces without any masks. In order to reduce a deterioration of a reliability caused by impurities in the bonding interface, quasi-direct bonding was realized by thinning Pt intermediate layer. The shear strength of Cu-Cu bonding with the Pt intermediate layer achieved 9.5 MPa, which was five times higher than that without the Pt intermediate layer. We expect that the proposed bonding technique has a high potential to low temperature packaging technologies.

UR - http://www.scopus.com/inward/record.url?scp=85062452713&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062452713&partnerID=8YFLogxK

U2 - 10.1109/IMPACT.2018.8625756

DO - 10.1109/IMPACT.2018.8625756

M3 - Conference contribution

T3 - Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT

SP - 123

EP - 126

BT - 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2018

PB - IEEE Computer Society

ER -