Low temperature crystallization of SrBi 2Ta 2O 9 film by excimer laser irradiation

K. S. Seol, H. Hiramatsu, Yoshimichi Ohki, D. S. Shin, I. H. Choi, Y. T. Kim

    Research output: Chapter in Book/Report/Conference proceedingChapter

    2 Citations (Scopus)

    Abstract

    Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi 2Ta 2O 9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium - Proceedings
    PublisherMaterials Research Society
    Pages293-298
    Number of pages6
    Volume541
    Publication statusPublished - 1999
    EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
    Duration: 1998 Nov 301998 Dec 3

    Other

    OtherProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'
    CityBoston, MA, USA
    Period98/11/3098/12/3

    Fingerprint

    Excimer lasers
    Laser beam effects
    Crystallization
    Irradiation
    Temperature
    Light sources
    Photons
    Lasers
    Substrates

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Seol, K. S., Hiramatsu, H., Ohki, Y., Shin, D. S., Choi, I. H., & Kim, Y. T. (1999). Low temperature crystallization of SrBi 2Ta 2O 9 film by excimer laser irradiation In Materials Research Society Symposium - Proceedings (Vol. 541, pp. 293-298). Materials Research Society.

    Low temperature crystallization of SrBi 2Ta 2O 9 film by excimer laser irradiation . / Seol, K. S.; Hiramatsu, H.; Ohki, Yoshimichi; Shin, D. S.; Choi, I. H.; Kim, Y. T.

    Materials Research Society Symposium - Proceedings. Vol. 541 Materials Research Society, 1999. p. 293-298.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Seol, KS, Hiramatsu, H, Ohki, Y, Shin, DS, Choi, IH & Kim, YT 1999, Low temperature crystallization of SrBi 2Ta 2O 9 film by excimer laser irradiation in Materials Research Society Symposium - Proceedings. vol. 541, Materials Research Society, pp. 293-298, Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998', Boston, MA, USA, 98/11/30.
    Seol KS, Hiramatsu H, Ohki Y, Shin DS, Choi IH, Kim YT. Low temperature crystallization of SrBi 2Ta 2O 9 film by excimer laser irradiation In Materials Research Society Symposium - Proceedings. Vol. 541. Materials Research Society. 1999. p. 293-298
    Seol, K. S. ; Hiramatsu, H. ; Ohki, Yoshimichi ; Shin, D. S. ; Choi, I. H. ; Kim, Y. T. / Low temperature crystallization of SrBi 2Ta 2O 9 film by excimer laser irradiation Materials Research Society Symposium - Proceedings. Vol. 541 Materials Research Society, 1999. pp. 293-298
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    abstract = "Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi 2Ta 2O 9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.",
    author = "Seol, {K. S.} and H. Hiramatsu and Yoshimichi Ohki and Shin, {D. S.} and Choi, {I. H.} and Kim, {Y. T.}",
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    AU - Seol, K. S.

    AU - Hiramatsu, H.

    AU - Ohki, Yoshimichi

    AU - Shin, D. S.

    AU - Choi, I. H.

    AU - Kim, Y. T.

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    N2 - Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi 2Ta 2O 9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

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