Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation

K. S. Seol, H. Hiramatsu, Y. Ohki, D. S. Shin, I. H. Choi, Y. T. Kim

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume541
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 1998 Nov 301998 Dec 3

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Seol, K. S., Hiramatsu, H., Ohki, Y., Shin, D. S., Choi, I. H., & Kim, Y. T. (1999). Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation. Materials Research Society Symposium - Proceedings, 541, 293-298.