Low temperature Cu bonding with large tolerance of surface oxidation

Hui Ren, Fengwen Mu, Seongbin Shin, Lei Liu, Guisheng Zou, Tadatomo Suga

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1 Citation (Scopus)

Abstract

A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis.

Original languageEnglish
Article number055127
JournalAIP Advances
Volume9
Issue number5
DOIs
Publication statusPublished - 2019 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Ren, H., Mu, F., Shin, S., Liu, L., Zou, G., & Suga, T. (2019). Low temperature Cu bonding with large tolerance of surface oxidation. AIP Advances, 9(5), [055127]. https://doi.org/10.1063/1.5097382