Abstract
We proposed a HF-assisted single crystal quartz direct bonding method at low temperature using amorphous SiO2 layer for high performance optical low pass filter (OLPF) to improve heat resistance compared with conventional OLPFs using UV-curing adhesive. Amorphous SiO2 was deposited by ion beam sputtering on backside of both infrared reflection and anti-reflection coated substrates. By the etching rate evaluation, amorphous SiO2 deposition is considered to provide high active surface useful for bonding. The HF bonded sample with amorphous SiO2 layer achieved 0.8 MPa in tensile test and 3.3 MPa in shear test, and also nearly 100 % light transmittance was performed, which is as the same level as conventional UV-curing adhesive one. Therefore, the proposed single crystal quartz direct bonding with amorphous SiO2 layers is considered to be a promising technique to realize high performance OLPFs.
| Original language | English |
|---|---|
| Title of host publication | MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 25-28 |
| Number of pages | 4 |
| Volume | 2016-February |
| ISBN (Electronic) | 9781509019731 |
| DOIs | |
| Publication status | Published - 2016 Feb 26 |
| Event | 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 - Shanghai, China Duration: 2016 Jan 24 → 2016 Jan 28 |
Other
| Other | 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 |
|---|---|
| Country | China |
| City | Shanghai |
| Period | 16/1/24 → 16/1/28 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers. / Ma, Bo; Kuwae, Hiroyuki; Okada, Akiko; Fu, Weixin; Shoji, Shuichi; Mizuno, Jun.
MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems. Vol. 2016-February Institute of Electrical and Electronics Engineers Inc., 2016. p. 25-28 7421548.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers
AU - Ma, Bo
AU - Kuwae, Hiroyuki
AU - Okada, Akiko
AU - Fu, Weixin
AU - Shoji, Shuichi
AU - Mizuno, Jun
PY - 2016/2/26
Y1 - 2016/2/26
N2 - We proposed a HF-assisted single crystal quartz direct bonding method at low temperature using amorphous SiO2 layer for high performance optical low pass filter (OLPF) to improve heat resistance compared with conventional OLPFs using UV-curing adhesive. Amorphous SiO2 was deposited by ion beam sputtering on backside of both infrared reflection and anti-reflection coated substrates. By the etching rate evaluation, amorphous SiO2 deposition is considered to provide high active surface useful for bonding. The HF bonded sample with amorphous SiO2 layer achieved 0.8 MPa in tensile test and 3.3 MPa in shear test, and also nearly 100 % light transmittance was performed, which is as the same level as conventional UV-curing adhesive one. Therefore, the proposed single crystal quartz direct bonding with amorphous SiO2 layers is considered to be a promising technique to realize high performance OLPFs.
AB - We proposed a HF-assisted single crystal quartz direct bonding method at low temperature using amorphous SiO2 layer for high performance optical low pass filter (OLPF) to improve heat resistance compared with conventional OLPFs using UV-curing adhesive. Amorphous SiO2 was deposited by ion beam sputtering on backside of both infrared reflection and anti-reflection coated substrates. By the etching rate evaluation, amorphous SiO2 deposition is considered to provide high active surface useful for bonding. The HF bonded sample with amorphous SiO2 layer achieved 0.8 MPa in tensile test and 3.3 MPa in shear test, and also nearly 100 % light transmittance was performed, which is as the same level as conventional UV-curing adhesive one. Therefore, the proposed single crystal quartz direct bonding with amorphous SiO2 layers is considered to be a promising technique to realize high performance OLPFs.
UR - http://www.scopus.com/inward/record.url?scp=84970951380&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84970951380&partnerID=8YFLogxK
U2 - 10.1109/MEMSYS.2016.7421548
DO - 10.1109/MEMSYS.2016.7421548
M3 - Conference contribution
AN - SCOPUS:84970951380
VL - 2016-February
SP - 25
EP - 28
BT - MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems
PB - Institute of Electrical and Electronics Engineers Inc.
ER -