Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers

Bo Ma; Hiroyuki Kuwae; Akiko Okada; Weixin Fu; Shuichi Shoji; Jun Mizuno

doi:10.1109/MEMSYS.2016.7421548

Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers

Bo Ma^*, Hiroyuki Kuwae, Akiko Okada, Weixin Fu, Shuichi Shoji, Jun Mizuno

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We proposed a HF-assisted single crystal quartz direct bonding method at low temperature using amorphous SiO2 layer for high performance optical low pass filter (OLPF) to improve heat resistance compared with conventional OLPFs using UV-curing adhesive. Amorphous SiO2 was deposited by ion beam sputtering on backside of both infrared reflection and anti-reflection coated substrates. By the etching rate evaluation, amorphous SiO2 deposition is considered to provide high active surface useful for bonding. The HF bonded sample with amorphous SiO2 layer achieved 0.8 MPa in tensile test and 3.3 MPa in shear test, and also nearly 100 % light transmittance was performed, which is as the same level as conventional UV-curing adhesive one. Therefore, the proposed single crystal quartz direct bonding with amorphous SiO2 layers is considered to be a promising technique to realize high performance OLPFs.

Original language	English
Title of host publication	MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25-28
Number of pages	4
ISBN (Electronic)	9781509019731
DOIs	https://doi.org/10.1109/MEMSYS.2016.7421548
Publication status	Published - 2016 Feb 26
Event	29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 - Shanghai, China Duration: 2016 Jan 24 → 2016 Jan 28

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume	2016-February
ISSN (Print)	1084-6999

Other

Other	29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016
Country/Territory	China
City	Shanghai
Period	16/1/24 → 16/1/28

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/MEMSYS.2016.7421548

Cite this

Ma, B., Kuwae, H., Okada, A., Fu, W., Shoji, S., & Mizuno, J. (2016). Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers. In MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems (pp. 25-28). [7421548] (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2016.7421548

Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers. / Ma, Bo; Kuwae, Hiroyuki; Okada, Akiko et al.

MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., 2016. p. 25-28 7421548 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ma, B, Kuwae, H, Okada, A, Fu, W, Shoji, S & Mizuno, J 2016, Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers. in MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems., 7421548, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 25-28, 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016, Shanghai, China, 16/1/24. https://doi.org/10.1109/MEMSYS.2016.7421548

Ma B, Kuwae H, Okada A, Fu W, Shoji S , Mizuno J. Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers. In MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc. 2016. p. 25-28. 7421548. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2016.7421548

Ma, Bo ; Kuwae, Hiroyuki ; Okada, Akiko et al. / Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers. MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 25-28 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

@inproceedings{71ab1758fd674250b922ee18dc7f3aa8,

title = "Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers",

abstract = "We proposed a HF-assisted single crystal quartz direct bonding method at low temperature using amorphous SiO2 layer for high performance optical low pass filter (OLPF) to improve heat resistance compared with conventional OLPFs using UV-curing adhesive. Amorphous SiO2 was deposited by ion beam sputtering on backside of both infrared reflection and anti-reflection coated substrates. By the etching rate evaluation, amorphous SiO2 deposition is considered to provide high active surface useful for bonding. The HF bonded sample with amorphous SiO2 layer achieved 0.8 MPa in tensile test and 3.3 MPa in shear test, and also nearly 100 % light transmittance was performed, which is as the same level as conventional UV-curing adhesive one. Therefore, the proposed single crystal quartz direct bonding with amorphous SiO2 layers is considered to be a promising technique to realize high performance OLPFs.",

author = "Bo Ma and Hiroyuki Kuwae and Akiko Okada and Weixin Fu and Shuichi Shoji and Jun Mizuno",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 ; Conference date: 24-01-2016 Through 28-01-2016",

year = "2016",

month = feb,

day = "26",

doi = "10.1109/MEMSYS.2016.7421548",

language = "English",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "25--28",

booktitle = "MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems",

}

TY - GEN

T1 - Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers

AU - Ma, Bo

AU - Kuwae, Hiroyuki

AU - Okada, Akiko

AU - Fu, Weixin

AU - Shoji, Shuichi

AU - Mizuno, Jun

PY - 2016/2/26

Y1 - 2016/2/26

N2 - We proposed a HF-assisted single crystal quartz direct bonding method at low temperature using amorphous SiO2 layer for high performance optical low pass filter (OLPF) to improve heat resistance compared with conventional OLPFs using UV-curing adhesive. Amorphous SiO2 was deposited by ion beam sputtering on backside of both infrared reflection and anti-reflection coated substrates. By the etching rate evaluation, amorphous SiO2 deposition is considered to provide high active surface useful for bonding. The HF bonded sample with amorphous SiO2 layer achieved 0.8 MPa in tensile test and 3.3 MPa in shear test, and also nearly 100 % light transmittance was performed, which is as the same level as conventional UV-curing adhesive one. Therefore, the proposed single crystal quartz direct bonding with amorphous SiO2 layers is considered to be a promising technique to realize high performance OLPFs.

AB - We proposed a HF-assisted single crystal quartz direct bonding method at low temperature using amorphous SiO2 layer for high performance optical low pass filter (OLPF) to improve heat resistance compared with conventional OLPFs using UV-curing adhesive. Amorphous SiO2 was deposited by ion beam sputtering on backside of both infrared reflection and anti-reflection coated substrates. By the etching rate evaluation, amorphous SiO2 deposition is considered to provide high active surface useful for bonding. The HF bonded sample with amorphous SiO2 layer achieved 0.8 MPa in tensile test and 3.3 MPa in shear test, and also nearly 100 % light transmittance was performed, which is as the same level as conventional UV-curing adhesive one. Therefore, the proposed single crystal quartz direct bonding with amorphous SiO2 layers is considered to be a promising technique to realize high performance OLPFs.

UR - http://www.scopus.com/inward/record.url?scp=84970951380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84970951380&partnerID=8YFLogxK

U2 - 10.1109/MEMSYS.2016.7421548

DO - 10.1109/MEMSYS.2016.7421548

M3 - Conference contribution

AN - SCOPUS:84970951380

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 25

EP - 28

BT - MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016

Y2 - 24 January 2016 through 28 January 2016

ER -

Low temperature direct bonding of single crystal quartz substrates for high performance optical low pass filter using amorphous SiO2 intermediate layers

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this