Low temperature direct crystallization of SrBi2(Ta1-xNbx)2O9 thin films by thermal metalorganic chemical vapor deposition and their properties

Masatoshi Mitsuya, Norimasa Nukaga, Keisuke Saito, Minoru Osada, Hiroshi Funakubo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Directly crystallized SrBi2(Ta1-xNbx)2O9 (SBTN) films were deposited on (111) Pt/Ti/SiO2/Si substrates at 585-670°C by thermal metalorganic chemical vapor deposition (MOCVD). The crystalline SBTN film was directly deposited at 670°C irrespective of the deposition rate, but its leakage current markedly decreased when the deposition rate decreased from 5.0 to 2.1 nm/min. When the deposition rate was below 2.1 nm/min, an SBTN film with large ferroelectricity was deposited even at 585°C, and strong (103)-orientation was ascertained by an X-ray reciprocal space mapping method. This orientation is considered to locally epitaxially occur on a (111)-oriented Pt substrate. Twice the remanent polarization (2Pr) and twice the coercive field (2Ec) of the film deposited at 585°C were 12.2 μC/cm2 and 160 kV/cm, respectively. When the deposition temperature increased, the film became randomly oriented which was in response to the orientation change in the Pt substrate from single (111) to a mixed orientation of (111) and (100) orientations by heating before starting the film deposition. 2Pr and 2Ec of the film deposited at 670°C increased to 23.8 μC/cm2 and 190 kV/cm, respectively.

Original languageEnglish
Pages (from-to)3337-3342
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
Publication statusPublished - 2001 May
Externally publishedYes


  • Direct preparation
  • Fatigue free
  • Low deposition temperature
  • Metalorganic chemical vapor deposition
  • Strontium bismuth tantalum niobium oxide

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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