Low temperature direct crystallization of SrBi2(Ta1-xNbx)2O9 thin films by thermal metalorganic chemical vapor deposition and their properties

Masatoshi Mitsuya, Norimasa Nukaga, Keisuke Saito, Minoru Osada, Hiroshi Funakubo

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Directly crystallized SrBi2(Ta1-xNbx)2O9 (SBTN) films were deposited on (111) Pt/Ti/SiO2/Si substrates at 585-670°C by thermal metalorganic chemical vapor deposition (MOCVD). The crystalline SBTN film was directly deposited at 670°C irrespective of the deposition rate, but its leakage current markedly decreased when the deposition rate decreased from 5.0 to 2.1 nm/min. When the deposition rate was below 2.1 nm/min, an SBTN film with large ferroelectricity was deposited even at 585°C, and strong (103)-orientation was ascertained by an X-ray reciprocal space mapping method. This orientation is considered to locally epitaxially occur on a (111)-oriented Pt substrate. Twice the remanent polarization (2Pr) and twice the coercive field (2Ec) of the film deposited at 585°C were 12.2 μC/cm2 and 160 kV/cm, respectively. When the deposition temperature increased, the film became randomly oriented which was in response to the orientation change in the Pt substrate from single (111) to a mixed orientation of (111) and (100) orientations by heating before starting the film deposition. 2Pr and 2Ec of the film deposited at 670°C increased to 23.8 μC/cm2 and 190 kV/cm, respectively.

Original languageEnglish
Pages (from-to)3337-3342
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number5 A
Publication statusPublished - 2001 May
Externally publishedYes

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Crystallization
crystallization
Thin films
thin films
Deposition rates
Temperature
Substrates
Ferroelectricity
Remanence
ferroelectricity
Hot Temperature
Leakage currents
leakage
Crystalline materials
Heating
X rays
heating
polarization

Keywords

  • Direct preparation
  • Fatigue free
  • Low deposition temperature
  • Metalorganic chemical vapor deposition
  • Strontium bismuth tantalum niobium oxide

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low temperature direct crystallization of SrBi2(Ta1-xNbx)2O9 thin films by thermal metalorganic chemical vapor deposition and their properties. / Mitsuya, Masatoshi; Nukaga, Norimasa; Saito, Keisuke; Osada, Minoru; Funakubo, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 5 A, 05.2001, p. 3337-3342.

Research output: Contribution to journalArticle

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