TY - JOUR
T1 - Low temperature growth of fully covered single-layer graphene using a CoCu catalyst
AU - Sugime, Hisashi
AU - D'Arsié, Lorenzo
AU - Esconjauregui, Santiago
AU - Zhong, Guofang
AU - Wu, Xingyi
AU - Hildebrandt, Eugen
AU - Sezen, Hikmet
AU - Amati, Matteo
AU - Gregoratti, Luca
AU - Weatherup, Robert S.
AU - Robertson, John
N1 - Funding Information:
This work has been funded by the European project Grafol and EPSRC grant EP/P005152/1. H. S. acknowledges a research fellowship from the Japanese Society for the Promotion of Science (JSPS). R. S. W. acknowledges a Research Fellowship from St John’s College, Cambridge and a Marie Skłodowska-Curie Individual Fellowship (Global) under grant ARTIST (no. 656870) from the European Union’s Horizon 2020 research and innovation programme.
Publisher Copyright:
© 2017 The Royal Society of Chemistry.
PY - 2017/10/14
Y1 - 2017/10/14
N2 - A bimetallic CoCu alloy thin-film catalyst is developed that enables the growth of uniform, high-quality graphene at 750 °C in 3 min by chemical vapour deposition. The growth outcome is found to vary significantly as the Cu concentration is varied, with ∼1 at% Cu added to Co yielding complete coverage single-layer graphene growth for the conditions used. The suppression of multilayer formation is attributable to Cu decoration of high reactivity sites on the Co surface which otherwise serve as preferential nucleation sites for multilayer graphene. X-ray photoemission spectroscopy shows that Co and Cu form an alloy at high temperatures, which has a drastically lower carbon solubility, as determined by using the calculated Co-Cu-C ternary phase diagram. Raman spectroscopy confirms the high quality (ID/IG < 0.05) and spatial uniformity of the single-layer graphene. The rational design of a bimetallic catalyst highlights the potential of catalyst alloying for producing two-dimensional materials with tailored properties.
AB - A bimetallic CoCu alloy thin-film catalyst is developed that enables the growth of uniform, high-quality graphene at 750 °C in 3 min by chemical vapour deposition. The growth outcome is found to vary significantly as the Cu concentration is varied, with ∼1 at% Cu added to Co yielding complete coverage single-layer graphene growth for the conditions used. The suppression of multilayer formation is attributable to Cu decoration of high reactivity sites on the Co surface which otherwise serve as preferential nucleation sites for multilayer graphene. X-ray photoemission spectroscopy shows that Co and Cu form an alloy at high temperatures, which has a drastically lower carbon solubility, as determined by using the calculated Co-Cu-C ternary phase diagram. Raman spectroscopy confirms the high quality (ID/IG < 0.05) and spatial uniformity of the single-layer graphene. The rational design of a bimetallic catalyst highlights the potential of catalyst alloying for producing two-dimensional materials with tailored properties.
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U2 - 10.1039/c7nr02553j
DO - 10.1039/c7nr02553j
M3 - Article
C2 - 28926077
AN - SCOPUS:85030653485
VL - 9
SP - 14467
EP - 14475
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 38
ER -